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HIGHLY MAGNETORESISTIVE THIN FILM MULTILAYERS

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
11829
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
11829
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.
11409 Valley View Road Eden Prairie, MN -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1990
Title: HIGHLY MAGNETORESISTIVE THIN FILM MULTILAYERS
Agency: NSF
Contract: N/A
Award Amount: $49,978.00
 

Abstract:

THE OBJECTIVE OF THIS PROPOSED PROGRAM IS TO SYNTHESIZE A THIN FILM MULTILAYER COMPOSITE MATERIAL WITH A VERY LARGE MAGNETORESISTIVE EFFECT - UP TO TEN TIMES THE 2.5% MAGNETORESISTANCE RATIO OF PERMALLOY MATERIALS USED TODAY. A RECENT FRENCH PUBLICATION(1) DESCRIBED A COMPOSITE FECR MULTILAYER WITH 25% ROOM TEMPERATURE MAGNETORESISTIVE RATIO MADE BY MBE TECHNIQUES. THIS PROPOSED PROGRAM WILL BUILD ON THAT WORK, BUT WILL PROVIDE A SOFT MAGNETIC COMPOSITE MATERIAL WITH LOW MAGNETOSTRICTION AND TCR WHICH ARE ESSENTIAL FOR PRACTICAL APPLICATION. THE MULTILAYERS WILL BE SPUTTERED FOR FAST TURNAROUND, ALLOY COMPOSITION CONTROL, AND RAPID COMMERCIALIZATION. FIRST EXPERIMENTS WILL USE FECR MULTILAYERS (9-60A(O) THICK EACH LAYER). THEN SOFT NONMAGNETOSTRICTIVE ALLOYS, INCLUDING PERMALLOY, WILL BE SUBSTITUTED FOR FE. ALTERNATIVES TO CR WILL BE INVESTIGATED. THE RESULTING COMPOSITES WILL BE CHARACTERIZED FOR MAGNETORESISTIVE AND MAGNETIC PROPERTIES FROM 2(O)K TO 330(O)K. A MODEL EXPLAINING THE MAGNETORESISTANCE OF THE COMPOSITE MULTILAYERS IS AN IMPORTANT GOAL.

Principal Investigator:

James M Daughton
President
0

Business Contact:

Small Business Information at Submission:

Nonvolatile Electronics Inc
5805 Amy Drive Edina, MN 55436

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No