Nanometer Magnetoresistive Random Access Memory

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 18039	Program Year/Program: 1993 / SBIR
Agency Tracking Number: 18039	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.
11409 Valley View Road Eden Prairie, MN -
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 2: Fiscal Year: 1993

Title: Nanometer Magnetoresistive Random Access Memory

Agency / Branch: DOD / MDA

Contract: N/A

Award Amount: $275,000.00

Abstract:
New cell concepts using better magnetoresistive material will make Magnetoresistive Random Access Memory (MRAM) denser for the same lithography than other semiconductor solid state memories such as DRAM, EEPROM, and flash, while retaining the advantages of both nonvolatility (saving data with no power) and durability (with infinite write- and read-cycling). Area densities of ten thousand million bits/cm2 will be achieved using 0.05 micron E-beam lithography. With these new cells, it may be possible to replace the present three level hierarchy (main, disk buffer, and disk memories) in computers with a single MRAM, radically improving system performance, size and weight, reliability, and cost. In Phase I the memory cell will be designed and simulated, and initial process defintion completed. In Phase II, the cells will be demonstrated.

Principal Investigator:
Kurt E. Spears
6125500913

Business Contact:

Small Business Information at Submission:

Nonvolatile Electronics, Inc.
12800 Industrial Park Blvd., Suite 110 Plymouth, MN 55441

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No