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INTEGRATED MULTI-TRACK GMR READ/WRITE HEAD WIT CMOS-SOS CIRCUITRY

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
21701
Program Year/Program:
1995 / SBIR
Agency Tracking Number:
21701
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.
11409 Valley View Road Eden Prairie, MN -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1995
Title: INTEGRATED MULTI-TRACK GMR READ/WRITE HEAD WIT CMOS-SOS CIRCUITRY
Agency: NSF
Contract: N/A
Award Amount: $299,980.00
 

Abstract:

AN INTEGRATED MULTITRACK READ/WRITE HEAD AND ASSOCIATED CIRCUITRY SUITABLE FOR HIGH PERFORMANCE (100 MHZ), ULTRAHIGH DENSITY (2X10(9) BITS/IN(2)) RECORDING IS BEING DESIGNED. THE MAGNETORESISTIVE SENSOR USES GIANT MAGNETORESISTANCE RATIO (GMR) MATERIAL, WHICH PROVIDES A MUCH HIGHER SIGNAL (ABOUT TEN TIMES) COMPARED WITH STANDARD MATERIALS BECAUSE OF HIGHER MAGNETORESISTANCE AND HIGHER SHEET RESISTIVITY. THE ORIENTATION OF THE SENSOR WILL BE ORTHOGONAL TO THE ORIENTATION OF THE SENSORS IN USE TODAY FOR IMPROVED RELIABILITY AND HIGHER DENSITY. THE ASSOCIATED CIRCUITRY IS BEING DESIGNED USING CMOS ON A SUBSTRATE OF SILICON ON SAPPHIRE (SOS) WHICH HAS BOTH FAVORABLE WEAR CAPABILITY AND LOWER PARASITIC CAPACITANCES THAN SILICON, AND HENCE WILL IMPROVE THE ELECTRICAL PERFORMANCE OF THE ON-CHIP CIRCUITRY. SENSORS FOR SERVO TRACKS ARE INCLUDED IN THE DESIGN. THE HEAD WILL BE DESIGNED, AND SATISFACTORY GMR MATERIALS WILL BE DEMONSTRATED ON A SUBSTRATE COMPRISED OF PERMALLOY SHIELDING MATERIAL ON SOS.

Principal Investigator:

Arthur V Pohm
6125500913

Business Contact:

Small Business Information at Submission:

Nonvolatile Electronics Inc.
12800 Industrial Pk Blvd #110 Plymouth, MN 55441

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No