High Density Shock Survivable Microelectronics
Agency / Branch:
DOD / USAF
A packaging system and process for minimizing the volume of shock hardened components will be designed and developed. Different multi-chip module (MCM) approaches will be investigated including laminate (MCM-L), ceramic (MCM-C), deposited thin film (MCM-D), and hybrids of the two (MCM-C/D). In addition, micro ball grid arrays on folded elastomeric substrates, 3-D High Density Interconnect (HDI) technology, and Stacked Silicon (SS) technologies will be evaluated. Samples of the selected technology will be tested with NVE's High G Tester (HGT) to prove their survivability. Increasing density by combining functions for a typical data recorder application on a single die will also be investigated such as incorporating a 32K x 8 high speed non-volatile memory, an analog-to-digital converter, and microprocessor on the same die using NVE's integrated circuit design technology. This chip could then be incorporated with the technology selected into an ultra dense stacked 3-D multichip module. NVE's new Magnetoresistive Random Access Memory (MRAM) technology would be studied for use in the 32K x 8 nonvolatile memory by shock testing arrays to insure that the bit designs were immune to magnetostriction. The results of this study would lead to an ultra-dense, high shock, programmable data recorder during a Phase II effort.
Small Business Information at Submission:
Principal Investigator:Robert A. Sinclair
Nonvolatile Electronics, Inc.
11409 Valley View Road Eden Prairie, MN 55344
Number of Employees: