This SBIR Phase II program will demonstrate prototype galvanic isolating devices of high-speed/low-power by incorporating high-speed magnetic films into giant magnetoresistive structures and by combining with high-speed IC electronics. The new devices will have five important improvements over existing devices, a factor of 10 faster, without a drive IC chip, a flip-chip approach, a lower supply voltage, and without incidental latching. High-speed magnetic films require less power to switch at the same speed in the ns range. The elimination of the driver chip will lower the power requirement, complexity and cost. Flip-chip technology will enhance the yield and provide a fast way for prototyping new devices at a low cost. A low voltage is intrinsic in reducing power and increasing speed. These improved isolating receiver and transceiver devices will meet the demand of the next generation high-speed data communications. Based on the results achieved in Phase I program, we plan to fabricate spin valve bridges using high-speed magnetic films, and make them compatible with fast IC electronics. The end devices will have the state of the art static properties, a high operating speed of 1 GBaud, a reasonably low budget, and a low cost.
Small Business Information at Submission:
Principal Investigator:Dexin Wang
Business Contact:Dexin Wnag
NVE, Corporation (Formerly Nonvolatile Electronics, Inc)
11409 Valley View Road Eden Prairie, MN 55344
Number of Employees: