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Magneto-Thermal MRAM

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
58788
Program Year/Program:
2002 / SBIR
Agency Tracking Number:
02-0128
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.
11409 Valley View Road Eden Prairie, MN -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2002
Title: Magneto-Thermal MRAM
Agency / Branch: DOD / MDA
Contract: DTRA01-02-P-0122
Award Amount: $70,000.00
 

Abstract:

"Magnetoresistive Random Access Memory (MRAM) density is limited by thermal stabilityof the storage elements for 0.1 micron and smaller lithographies. This proposedprogram overcomes the thermal stability limits of MRAM cells through the use ofintrinsically high coupling fields between a ferromagnetic film and an anti-ferromagnetic film, which creates high storage energy, and through the use of bothmagnetic fields and heating for writing selected cells. Currents in the cellproduce both the magnetic field and Joule heating. Either or both the Neeltemperature of the antiferromagnet and/or the Curie point of the ferromagnet must belower than about 300 degrees C for best operation. Materials, modes of operation,and memory architectures will be explored in Phase I. Repeated (to 10 billion)cell switching with switching times faster than 3 ns using the preferred mode ofoperation will be shown during Phase I. Phase II will show operating arrays ofmagneto-thermal cells with 0.05 micron lithography. This technique can extend theultimate density of MRAM by more than a factor of 10, reduce currents (power), andimprove producibility. Very high density nonvolatile memory can be used commercially for "instant on"applications in computing and to replace slow access time hard disk drives,especially where less than 100 GBytes are required. The intrinsic radiation hardnessand rugged nature of this memory make it especially suited for space applic

Principal Investigator:

James M. Daughton
Chief Technical Officer
9529961607
daughton@nve.com

Business Contact:

James M. Daughton
Chief Technical Officer
9529961607
daughton@nve.com
Small Business Information at Submission:

Nve Corp. (Formerly Nonvolatile Electronics, Inc.
11409 Valley View Road Eden Prairie, MN 55344

EIN/Tax ID: 411424202
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No