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Company Information:

Company Name: Ortel Corp.
City: Alhambra
State: CA
Zip+4: 91803
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $822,670.00 14
SBIR Phase II $2,817,762.00 5

Award List:

OPTICAL TO MICROWAVE LASER DIODE SOURCE

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr kam lau
Award Amount: $49,420.00
Abstract:
The optical output intensity of a laser diode with a controlled monolithic absorber is made to oscillate at frequencies from 1 ghz to over 20 ghz by three methods: 1. by operating in an external optical cavity. 2. by opto-electronic feedback. 3. by a long cavity laser.

PIGTAILED SINGLE MODE LASER DIODES

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Dr israel ury
Award Amount: $49,751.00
Abstract:
Cost reduction in the manufacturing of making pigtailed singlemode laser diodes. ortel proposes a two-fold approach utilizing an innovative closed loop positioning system for coupling/positioning the singlemode fiber pigtail. this will be combined with a new mechanicaldesign for laser welding the… More

APPLICATIONS OF NON-LINEAR OPTICS FOR PHASE AND IMAGE RETRIEVAL THROUGH ABERRATING MEDIA

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr sze0keung kwong
Award Amount: $48,600.00
Abstract:
We propose to study a new method of single pass image reconstruction through distortion using non-linear photo refractive medium. the new method does not require a clean pumping bean as needed previously permitting less restrictions being placed on practical applications.

ELECTRO-OPTIC TECHNIQUES FOR VERY LARGE SCALE INTEGRATED INTERCONNECTS

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Dr israel ury
Award Amount: $49,748.00
Abstract:
We propose to develop a new class of optical emitting device for use in computer optical interconnect system. the new device is an electroabsorption modulator-super-luminescent diode (eam-slk). this device does not suffer from the short comings of semiconductor lasers such as, variable threshold,… More

LASER DIODE ARRAY FABRICATION

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Jeffrey E Ungar
Award Amount: $49,199.00

IMPROVED MICROWAVE PERFORMANCE OF LASER DIODES BY THE USE OF OPTICAL FACET COATING TECHNIQUES

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Dr henry blauvelt
Award Amount: $49,885.00
Abstract:
Optical fiber has outstanding properties for use in microwave signal transmission. in this proposal, techniques are described for enhancing the microwave performance of laser diodes by facet coating. facet coating techniques are proposed to increase the bandwidth and to narrow the spectral width of… More

LASER DISTORTION REDUCTION USING ACTIVE OPTICAL FEEDBACK

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: David b huff
Award Amount: $49,873.00
Abstract:
With laser diodes, a portion of the output optical signal can be converted to an electrical signal and compared with the input electrical signal. this comparison generates an error signal which, when amplified and applied to the laser, tends to cancel distortions present in the optical signal. this… More

ULTRA-WIDE BAND OPTOELECTRONIC MICROWAVE MIXER FOR PHASED ARRAY RADAR

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Dr Kam Y Lau
Award Amount: $49,930.00

LASER DIODE ARRAY FABRICATION

Award Year / Program / Phase: 1989 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Jeffrey E Ungar
Award Amount: $499,541.00
Abstract:
Approach to fabrication of very low cost, high power gaalas laser diode sources for pumping of solid state lasers is described. approach uses nocvd to fabricate broad area lasers. thin active layers and non-absorbing facets used to increase power density.

MILLIMETER WAVE PACKAGING OF OPTOELECTRONIC COMPONENTS

Award Year / Program / Phase: 1989 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: David B Huff
Award Amount: $49,928.00
Abstract:
Current device technology is progressing to the point that new packaging techniques are required to allow the full high speed capabilities of these devices to be used. current fiber optic packaging is limited by mechanical considerations to below 20 ghz. new package designs are needed to push the… More

ULTRA-WIDE BAND OPTOELECTRONIC MICROWAVE MIXER FOR PHASED ARRAY RADAR

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Dr Kam Y Lau
Award Amount: $500,000.00
Abstract:
A combination of optoelectronics and mmic technology has been cited as a must for implementation of future phased array radar systems where tens of thousands of elements are involved. an important element in such systems is wide band mixers. since the microwave signals are carried in optical form,… More

HIGH MODUALATION RATE WAVEGUIDE PHOTODIODES

Award Year / Program / Phase: 1991 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Joel Paslaski , Principal Investigator
Award Amount: $49,948.00

HIGH MODUALATION RATE WAVEGUIDE PHOTODIODES

Award Year / Program / Phase: 1992 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Joel Paslaski , Principal Investigator
Award Amount: $499,990.00
Abstract:
At frequencies above 10 ghz, conventional photodiodes must sacrifice quantum efficiency for speed since the thin active layers required do not absorb all of the light passing through them. a waveguide photodiode structure allows absorption over a much greater length along the active layer thus… More

Laser Diodes Using InGaP Confining Layers

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Jeffrey Ungar, Phd
Award Amount: $50,760.00

Laser Diodes Using InGaP Confining Layers

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Jeffrey Ungar, Phd
Award Amount: $568,834.00
Abstract:
Laser diodes which incorporate chemically reactive aluminum based materials in their structures are prone to have poor reliability when operated at high output powers because of facet oxidation. The presence of aluminum also makes it difficult to fabricate high performance laser diodes using more… More

Wide Temperature Range Distributed Feedback Lasers

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: T. R. Chen
Award Amount: $79,690.00

Control Systems for Linearized External Modulators

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr Rudolf Hofmeister
Award Amount: $99,696.00
Abstract:
Ortel proposes to investigate methods of performing closed loop control of optically linearized modulators for use in externally modulated analog fiberoptic links. These links are becoming more popular at 1550 nm because of lower optical loss at the longer wavelength, and because of the… More

High-Power 1550 nm InGaAsP MOPA with Simplified Coupling to Single-Mode Fiber

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr. Michael Newkirk
Award Amount: $96,242.00
Abstract:
A high-power cw optical source at 1550 nm is a key component of an externally modulated optical transmitter for future optical networks. Due to its high efficiency, reliability, and compact size, an integrated semiconductor MOPA is a promising candidate for achieving high power. However, it is… More

Wide Temperature Range Distributed Feedback Lasers

Award Year / Program / Phase: 1997 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: T. R. Chen
Award Amount: $749,397.00
Abstract:
Current fiber optic links designed for high dynamic range applications use distributed-feedback (DFB) semiconductor lasers that only operate over a narrow temperature range. Thermoelectric coolers are ordinarily required to maintain the laser within the operating temperature range. This limitation… More