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65-GHz Bandwidth 900-1600 nm Photodetector

Award Information

Department of Defense
Air Force
Award ID:
Program Year/Program:
1995 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Picometrix LLC
2925 Boardwalk Ann Arbor, MI 48104-
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 2
Fiscal Year: 1995
Title: 65-GHz Bandwidth 900-1600 nm Photodetector
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $679,121.00


The objective of this Phase I is to develop a novel 65-GHz bandwidth photodetector with high sensitivity between 900-1600 nm. This detector will have a response time of 5 ps, making it the fastest near-IR photodetector available. It will have a responsivity of 0.2 A/W and dark current < 50 nA, with an active area of 50x50 square micrometers. It will also be capable of generating signals with amplitudes exceeding 1 volt into 50 ohms. This detector will function like a photoconductor instead of a photodiode. Its speed will be derived from deep-level traps that form in InGaAs when grown under non-stoichiometric molecular-beam-epitaxy conditions. This technique has been applied by us to non-stoichiometric growth of GaAs to yield a 400-900 nm, metal-semiconductor-metal detector with 0.1 A/W sensitivity and 1 ps response time. This is the fastest visible photodetector in the world. During this Phase I we will develop the non-stoichiometric growth conditions for InGaAs. We will also use a newly developed 2-picosecond-resolution electrical probe to help design the ideal electrode geometries for both the detector and microwave launcher.

Principal Investigator:

Steve Williamson

Business Contact:

Small Business Information at Submission:

PO Box 130243 Ann Arbor, MI 48113

Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No