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PLASMAS
Title: PRESIDENT
Phone: () -
Title: President
Phone: () -
IN ORDER TO MEET THE ACCELERATING MARKET DEMAND FOR VLSI SEMI-CONDUCTOR MEMORY AND LOGIC CIRCUITS, IT APPEARS AS THOUGH MAGNETICALLY CONFINED PLASMAS ARE REQUIRED IN ORDER TO ATTAIN ANISOTROPIC ETCHING AT A HIGH RATE. CURRENT HIGH-PRESSURE PLASMA SYSTEMS ETCH WITH A HIGH RATE BUT WITH POOR FEATURE CONFORMATION, WHILE REACTIVE ION ETCHERS ETCH ANISOTROPICALLY, BUT SLOWLY. THE PROPOSED SYSTEM USES A MAGNETRON CONFINEMENT GEOMETRY DISCOVERED BY THE PROPOSER SEVERAL YEARS AGO ON A GAS DIODE PROJECT WHERE IT WAS OBSERVED THAT SPUTTERING OF THE DIODE CATHODE WAS UNIFORM AND RAPID. WE PROPOSE TO APPLY THIS GEOMETRY TO ETCH VLSIC WITH ONE MICRON FEATURE SIZES IN THE SURFACE OF SEMICONDUCTOR WAFERS. SUCCESSFUL COMPLETION OF THIS APPARATUS WOULD BENEFIT THE CIRCUIT DESIGNERS, ENABLING FABRICATION OF HIGHER-DENSITY MEMORY CIRCUITS AND THE COMPETITIVE POSITION WORLD-WIDE OF THE NATION'S ELECTRONIC INDUSTRY WHOSE PRODUCTS ARE LIMITED BY THE RESOLUTION OF ETCH FEATURES IN CHIPS.
* Information listed above is at the time of submission. *