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Low-Noise Avalanche Photodiodes for Midwave Infrared (2 to 5 um) Applications

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
72731
Program Year/Program:
2005 / STTR
Agency Tracking Number:
F045-021-0231
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Princeton Lightwave, Inc.
2555 Route 130 South, Suite 1 Cranbury, NJ -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2005
Title: Low-Noise Avalanche Photodiodes for Midwave Infrared (2 to 5 um) Applications
Agency / Branch: DOD / USAF
Contract: FA9550-05-C-0007
Award Amount: $99,898.00
 

Abstract:

In this program, we will develop room-temperature avalanche photodiodes (APDs) for midwave infrared (MWIR) applications. The internal gain of APDs results in significant improvements in optical receiver sensitivity, and APDs have been widely used for telecommunications receivers with In(0.53)Ga(0.47)As absorption regions lattice-matched to InP substrates. However, In(0.53)Ga(0.47)As is transparent to wavelengths longer than 1.65 um, and to date, APDs have not been available for the MWIR because materials that exhibit strong MWIR absorption also generate high dark currents at fields required for impact ionization. We propose a novel MWIR APD design that will maintain low noise, good responsivity, and high gain-bandwidth product. The device will employ the separate absorption, charge, and multiplication (SACM) structure widely used for telecommunications receivers coupled with several critical new design features: (1) an ultra-low-noise impact ionization engineered (I2E) multiplication region and (2) an undepleted absorber structure that will facilitate the incorporation of (3) an absorption region optimized for MWIR detection. For the absorption region, we will study Sb-based bulk materials such as InGaAsSb and InAsPSb as well as Sb-based strain-compensated quantum well structures. For the multiplication region, we will use compositions compatible with the GaSb-based absorption regions, such as AlGaAsSb, and apply these materials in the design of an I2E multiplication region.

Principal Investigator:

Mark Itzler
Chief Technical Officer
6094952551
mitzler@princetonlightwave.com

Business Contact:

Mark Itzler
Chief Technical Officer
6094952551
mitzler@princetonlightwave.com
Small Business Information at Submission:

Princeton Lightwave, Inc.
2555 Route 130 South Cranbury, NJ 08512

EIN/Tax ID: 223711457
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
UNIV. OF TEXAS
UT/PRC/MER #R9950, 10100 Burnet Road; Building 16
Austin, TX 78758
Contact: Joe C. Campbell
Contact Phone: (512) 471-9669
RI Type: Nonprofit college or university