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Indium Gallium Nitride (InGaN) Solar Cell

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
91925
Program Year/Program:
2010 / SBIR
Agency Tracking Number:
08SB2-0794
Solicitation Year:
N/A
Solicitation Topic Code:
DARPA 08-052
Solicitation Number:
N/A
Small Business Information
CERMET, INC.
1019 Collier Road Suite C1 Atlanta, GA 30318
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2010
Title: Indium Gallium Nitride (InGaN) Solar Cell
Agency / Branch: DOD / DARPA
Contract: W91CRB-10-C-0130
Award Amount: $734,232.00
 

Abstract:

Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi-junction InGaN geometries, highly efficient solar cells will be demonstrated.

Principal Investigator:

Jeff Nause
President
4043510005
jnause@cermetinc.com

Business Contact:

Karen Shaw
Program Administrator
4043510005
kshaw@cermetinc.com
Small Business Information at Submission:

Cermet, Inc.
1019 Collier Road Suite C1 Atlanta, GA 30318

EIN/Tax ID: 580195334
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No