Passive IR Sensors Based on High Quantum Efficiency P-on-N Type-II Strained Layer Superlattices
Agency / Branch:
DOD / MDA
We propose to develop sensitive passive infrared sensors for ballistic missile defense applications from Type-II InAs/GaSb strained layer superlattices (SLS). The novelty of our approach lies in using a P-on-N photodiode device geometry (in contrast to the usual N-on-P) to leverage the excellent low-noise readout multiplexers available to drive these diode arrays. In Phase 1, we will quantify and optimize our material and passivation quality, and develop and DELIVER a 320x256 longwave infrared focal plane array (LWIR FPA). In Phase 2, we will further drive the technology and develop and DELIVER 1Kx1K dualband FPAs with pixel-registered and simultaneous imaging in two longwave infrared bands. This FPA will enhance target discrimination and provide a larger field of view to infrared seekers such as THAAD.
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