USA flag logo/image

An Official Website of the United States Government

Company Information:

Company Name: QUANTTERA
City: Scottsdale
State: AZ
Zip+4: 85260-2891
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (602) 214-3524

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $449,997.00 4
SBIR Phase II $1,215,497.00 2
STTR Phase I $400,000.00 3

Award List:

Silicon-Based Quantum Well Laser

Award Year / Program / Phase: 2005 / STTR / Phase I
Agency / Branch: DOD / USAF
Research Institution: ARIZONA STATE UNIV.
Principal Investigator: Matt Kim, President
Award Amount: $100,000.00
RI Contact: John Kouvetakis
Abstract:
QuantTera is developing a new class of silicon based-quantum-well near-infrared lasers using group IV semiconductor materials for photonic integrated systems. The uniqueness of this project lies in the development of a strained quantum well active region, which can be tuned to various laser… More

Space-Based Near-IR Monolithic Tunable Laser

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Matt Kim, President
Award Amount: $99,998.00
Abstract:
QuantTera is developing a near-IR tunable laser for space based laser communications. We have developed a unique material system that is optimal for tuning of wavelengths from 1300 nm to 1500 nm. This platform will achieve wavelength resolution of 0.1 pm with tuning speeds greater than 100 nm/s… More

Space-Based Near-IR Monolithic Tunable Laser

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Matt Kim, President
Award Amount: $750,000.00
Abstract:
QuantTera is developing a near-IR voltage tunable laser for space based laser communications. We have developed a unique device platform that is capable of providing laser emission from 1300 nm to 1600 nm. In particular this proposal is focussed in developing a tunable laser near 1550 nm with a… More

STTR Phase I: Ultra-high Performance InAsN Transistor for RF Power Amplifiers

Award Year / Program / Phase: 2007 / STTR / Phase I
Agency: NSF
Research Institution: VPI
Principal Investigator: Matt R. Kim, Dr
Award Amount: $150,000.00
RI Contact: Louis J. Guido
Abstract:
This Small Business Technology Transfer (STTR) Phase I project will develop ultra-high-performance heterojunction bipolar transistors. An exciting new material, the InAsN semiconductor alloy system, is the key element in the concept for a low-voltage, high-speed GaAs transistor platform that is… More

SBIR Phase I:Si-Ge Quantum Dot Laser

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NSF
Principal Investigator: Matt Kim, PhD
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research Phase I project is to develop silicon germanium quantum dot lasers. The quantum dot approach has demonstratable advantages for the near-IR wavelengths of 1.3 to 1.55 micron. Near-IR lasers emitting at 1.3 ýým and 1.55 ýým are very important to… More

STTR Phase I: Broadband Silicon-Germanium Based Quantum Dot Materials

Award Year / Program / Phase: 2009 / STTR / Phase I
Agency: NSF
Research Institution: University of Delaware
Principal Investigator: Matt Kim, PhD
Award Amount: $150,000.00
RI Contact: Susan Tompkins
Abstract:
This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). This Small business Technology Transfer Phase I project is to develop silicon-germanium based quantum dot materials that operate over a wide range of optical wavelengths by virtue of their composition… More

Quick Turn Photonic Component Manufacturability Rapid Prototyping

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Matt Kim, Research Scientist
Award Amount: $99,999.00
Abstract:
The Air Force recognizes the need for innovation in assembly-packing-test for fabricating airborne high-performance photonic components. Transmitters that can operate at various optical wavelengths are desired to allow re-configurability, increase system capacity, reduce the amount of electronic… More

SBIR Phase I:Ultra Low Power InAsN Semiconductor Transistors

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency: NSF
Principal Investigator: Matt Kim, PhD
Award Amount: $150,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will demonstrate the viability of a new III-V nitride semiconductor alloy and bipolar transistor structure with the potential to enable ultra low power device operation in applications requiring both RF and digital electronics. … More

SBIR Phase II: Ultra Low Power InAsN Semiconductor Transistors

Award Year / Program / Phase: 2012 / SBIR / Phase II
Agency: NSF
Principal Investigator: Matt Kim
Award Amount: $465,497.00
Abstract:
This Small Business Innovation Research (SBIR) Phase II project will demonstrate a new III-V nitride semiconductor alloy and bipolar transistor structure with the potential to enable ultra low power device operation in applications requiring both Radio Frequency (RF) and digital electronics. The… More