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Company Information:

Company Name:
Quantum Epitaxial Designs,
Address:
119 Technology Drive
Bethlehem, PA 18015
Phone:
N/A
URL:
N/A
EIN:
N/A
DUNS:
N/A
Number of Employees:
50
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $812,827.00 12
SBIR Phase II $1,707,800.00 3

Award List:

ULTRASTRUCTURED MATERIALS

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$55,926.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Thomas Hierl
Abstract:
The most promising candidate for the next generation, high speed electronic devices is the pseudomorphic high electron mobility transistor (phemt). devices based on phemt technology have demonstrated extremely high cut-off frequencies. full utilization of the modulation doping phenomena can be… More

PLANAR DOPED PSEUDOMORPHIC HIGH ELECTRONIC MOBILITY TRANSISTOR DEVELOPMENT

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$55,107.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Thomas Hierl , Principal Investigator
Abstract:
The most promising material system to meet the performance criteria for low noise and power devices operating at millimeterwave frequencies is the planar doped pseudomorphic high electron mobility transistor. with mmic processing compatibility with standard algaas/gaas hemts, this material system… More

OPTIMIZATION OF INGAAS/INALAS/INP EOIC STRUCTURES: AN MBE MATERIAL PARAMETER STUDY

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,926.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Larry W. Kapitan
Abstract:
N/a

OPTIMIZATION OF INGAAS/INALAS/INP EOIC STRUCTURES: AN MBE MATERIAL PARAMETER STUDY

Award Year / Program / Phase:
1993 / SBIR / Phase II
Award Amount:
$509,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Larry W. Kapitan
Abstract:
Phase i of this program will optimize the growth of lattice matched ingaas/inalas on inp for eoic applications through the use on innovative molecular beam epitaxial (mbe) growth and calibration procedures. the program will study the effects of slight lattice mismatch on thick epitaxial layers. the… More

InP Channel HEMT Development for MM-Wave Power Applications

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$90,846.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Larry Kapitan
Abstract:
Millimeter-wave system designers are limited to two terminal devices when high powers are required from a solid state device. InGaAs/InAlAs HEMTs latticed matched to InP substrates have produced excellent low noise results at millimeter-wave frequencies. The high power performance, however, is… More

Quantum-Well, Infrared Photodetectors Using III-V Materialsp

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$66,196.00
Agency:
NASA
Principal Investigator:
Larry Kapitan
Abstract:
N/a

Carbon Doped HBT Development for Power Applications

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Scott Massie
Abstract:
N/a

Carbon Doped HBT Development for Power Applications

Award Year / Program / Phase:
1995 / SBIR / Phase II
Award Amount:
$744,918.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Scott Massie
Abstract:
Heterojunction bipolar transistor, HBT, technology offers an extremely attractive alternative to field effect transistors, FETs, for a variety of high speed applications. High p-type base doping levels (on the order of 1O 20 power cm-3) have allowed for the improvement of the maximum oscillation… More

Cool Heterojunction Metal Semiconductor Metal Photodetect

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$59,640.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Scott Massie
Abstract:
Metal Semiconductor Metal (MSM) photodetectors are used in a wide range of commercial and military applications such as phased array radars, photonic gates for MIMIC circuits, analog circuits for imaging with neutral networks, optical detectors for communication links and optical ports for computer… More

Quantum-Well, Infrared Photodetectors Using III-V Materialsp

Award Year / Program / Phase:
1995 / SBIR / Phase II
Award Amount:
$453,882.00
Agency:
NASA
Principal Investigator:
Larry Kapitan
Abstract:
Quantum Well Infrared Photodetectors (QWIPs) based on the III-V material system make an excellent detector choice for certain infrared applications. Although the QWIP does not compare favorably with the ideal HgCdTe detector due to its intrinsically shorter carrier lifetimes (about 1-10 ps) leading… More

Intersubband Quantum Cascade Infrared Laser Development

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr. Scott Massie
Abstract:
Quantum well intersubband transition devices have generated a large amount of interest over the past several years. With the demonstration of the first intersubband laser this past year at AT&T Bell Labs, a new class of laser material was introduced. The extension of this work to the GaAs/AlGaAs… More

Integrated QWIP Focal Plane Array Technology

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$62,101.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Ken Bacher
Abstract:
Current focal plane array technology remains more expensive than the budgeted acquisition costs for many DOD systems. Even though DOD has spent millions of dollars to improve HgCdTe manufacturing technologies, it is now obvious that the projected manufacturing costs will never be achieved due to the… More

Dual Band Normal Incidence Quantum Well Intersubband Photodetector

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$62,240.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Ken Bacher
Abstract:
GaAs-based Quantum Well Intersubband Photodetectors (QWIP's) are very attractive devices for large staring Focal Plane Arrays) FPA's) at mid and long infrared wavelengths. The mature GaAs processing technology allows larger arrays with higher pixel operability and better uniformity to be… More

Improved Wavelength-Insensitive Optical Coupling for Quantum Well Intersubband Photodetectors

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$83,692.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Ken Bacher
Abstract:
GaAs based Quantum Well Intersubband Photodetectors (QWIP) are attractive devices for large staring Focal Plane Arrays (FPA) at mid- and long- infrared wavelengths. The mature GaAs processing technology allows larger arrays with higher pixel operability and better uniformity to be manufactured at… More

Enhanced Reliability of Radiation-hardened III-V Semiconductor-based Field Effect Transistors Using C-doped Low-temperature Buffer

Award Year / Program / Phase:
1998 / SBIR / Phase I
Award Amount:
$97,153.00
Agency / Branch:
DOD / NGA
Principal Investigator:
Scott Massie
Abstract:
Low-temperature MBE grown GaAs (LT-GaAs) contains a high concentration of excess As which gives rise to ultra-fast carrier-trapping time and excellent radiation hardness. In as-grown layers most of this excess As is in the form of As(Ga) antisite defects, of which only ~1% are ionized. Thermal… More