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Company Information:

Company Name: Quantum Epitaxial Designs,
City: Bethlehem
State: PA
Zip+4: 18015
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $812,827.00 12
SBIR Phase II $1,707,800.00 3

Award List:

ULTRASTRUCTURED MATERIALS

Award Year / Program / Phase: 1989 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Thomas Hierl
Award Amount: $55,926.00
Abstract:
The most promising candidate for the next generation, high speed electronic devices is the pseudomorphic high electron mobility transistor (phemt). devices based on phemt technology have demonstrated extremely high cut-off frequencies. full utilization of the modulation doping phenomena can be… More

PLANAR DOPED PSEUDOMORPHIC HIGH ELECTRONIC MOBILITY TRANSISTOR DEVELOPMENT

Award Year / Program / Phase: 1991 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Thomas Hierl , Principal Investigator
Award Amount: $55,107.00
Abstract:
The most promising material system to meet the performance criteria for low noise and power devices operating at millimeterwave frequencies is the planar doped pseudomorphic high electron mobility transistor. with mmic processing compatibility with standard algaas/gaas hemts, this material system… More

OPTIMIZATION OF INGAAS/INALAS/INP EOIC STRUCTURES: AN MBE MATERIAL PARAMETER STUDY

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Larry W. Kapitan
Award Amount: $49,926.00

OPTIMIZATION OF INGAAS/INALAS/INP EOIC STRUCTURES: AN MBE MATERIAL PARAMETER STUDY

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Larry W. Kapitan
Award Amount: $509,000.00
Abstract:
Phase i of this program will optimize the growth of lattice matched ingaas/inalas on inp for eoic applications through the use on innovative molecular beam epitaxial (mbe) growth and calibration procedures. the program will study the effects of slight lattice mismatch on thick epitaxial layers. the… More

InP Channel HEMT Development for MM-Wave Power Applications

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Larry Kapitan
Award Amount: $90,846.00
Abstract:
Millimeter-wave system designers are limited to two terminal devices when high powers are required from a solid state device. InGaAs/InAlAs HEMTs latticed matched to InP substrates have produced excellent low noise results at millimeter-wave frequencies. The high power performance, however, is… More

Quantum-Well, Infrared Photodetectors Using III-V Materialsp

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency: NASA
Principal Investigator: Larry Kapitan
Award Amount: $66,196.00

Carbon Doped HBT Development for Power Applications

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Scott Massie
Award Amount: $60,000.00

Carbon Doped HBT Development for Power Applications

Award Year / Program / Phase: 1995 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Scott Massie
Award Amount: $744,918.00
Abstract:
Heterojunction bipolar transistor, HBT, technology offers an extremely attractive alternative to field effect transistors, FETs, for a variety of high speed applications. High p-type base doping levels (on the order of 1O 20 power cm-3) have allowed for the improvement of the maximum oscillation… More

Cool Heterojunction Metal Semiconductor Metal Photodetect

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Scott Massie
Award Amount: $59,640.00
Abstract:
Metal Semiconductor Metal (MSM) photodetectors are used in a wide range of commercial and military applications such as phased array radars, photonic gates for MIMIC circuits, analog circuits for imaging with neutral networks, optical detectors for communication links and optical ports for computer… More

Quantum-Well, Infrared Photodetectors Using III-V Materialsp

Award Year / Program / Phase: 1995 / SBIR / Phase II
Agency: NASA
Principal Investigator: Larry Kapitan
Award Amount: $453,882.00
Abstract:
Quantum Well Infrared Photodetectors (QWIPs) based on the III-V material system make an excellent detector choice for certain infrared applications. Although the QWIP does not compare favorably with the ideal HgCdTe detector due to its intrinsically shorter carrier lifetimes (about 1-10 ps) leading… More

Intersubband Quantum Cascade Infrared Laser Development

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Dr. Scott Massie
Award Amount: $70,000.00
Abstract:
Quantum well intersubband transition devices have generated a large amount of interest over the past several years. With the demonstration of the first intersubband laser this past year at AT&T Bell Labs, a new class of laser material was introduced. The extension of this work to the GaAs/AlGaAs… More

Integrated QWIP Focal Plane Array Technology

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Ken Bacher
Award Amount: $62,101.00
Abstract:
Current focal plane array technology remains more expensive than the budgeted acquisition costs for many DOD systems. Even though DOD has spent millions of dollars to improve HgCdTe manufacturing technologies, it is now obvious that the projected manufacturing costs will never be achieved due to the… More

Dual Band Normal Incidence Quantum Well Intersubband Photodetector

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Ken Bacher
Award Amount: $62,240.00
Abstract:
GaAs-based Quantum Well Intersubband Photodetectors (QWIP's) are very attractive devices for large staring Focal Plane Arrays) FPA's) at mid and long infrared wavelengths. The mature GaAs processing technology allows larger arrays with higher pixel operability and better uniformity to be… More

Improved Wavelength-Insensitive Optical Coupling for Quantum Well Intersubband Photodetectors

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Ken Bacher
Award Amount: $83,692.00
Abstract:
GaAs based Quantum Well Intersubband Photodetectors (QWIP) are attractive devices for large staring Focal Plane Arrays (FPA) at mid- and long- infrared wavelengths. The mature GaAs processing technology allows larger arrays with higher pixel operability and better uniformity to be manufactured at… More

Enhanced Reliability of Radiation-hardened III-V Semiconductor-based Field Effect Transistors Using C-doped Low-temperature Buffer

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / NGA
Principal Investigator: Scott Massie
Award Amount: $97,153.00
Abstract:
Low-temperature MBE grown GaAs (LT-GaAs) contains a high concentration of excess As which gives rise to ultra-fast carrier-trapping time and excellent radiation hardness. In as-grown layers most of this excess As is in the form of As(Ga) antisite defects, of which only ~1% are ionized. Thermal… More