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ULTRASTRUCTURED MATERIALS

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
10094
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
10094
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Quantum Epitaxial Designs,
119 Technology Drive Bethlehem, PA 18015
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1989
Title: ULTRASTRUCTURED MATERIALS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $55,926.00
 

Abstract:

THE MOST PROMISING CANDIDATE FOR THE NEXT GENERATION, HIGH SPEED ELECTRONIC DEVICES IS THE PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT). DEVICES BASED ON PHEMT TECHNOLOGY HAVE DEMONSTRATED EXTREMELY HIGH CUT-OFF FREQUENCIES. FULL UTILIZATION OF THE MODULATION DOPING PHENOMENA CAN BE ACHIEVED BY INCREASING THE CONDUCTION BAND DISCONTINUITY BETWEEN THE INGAAS CHANNEL AND ALGAAS DONOR LAYER BY INCREASING THE INDIUM MOLE FRACTION TO 40%. IN ORDER TO PREVENT LATTICE STRAIN RELAXATION DUE TO THE LARGE LATTICE MISMATCH BETWEEN MATERIALS, CONVENTIONAL MBE MUST BE SUPPLEMENTED WITH THE ADVANCED GROWTH TECHNIQUES OF MIGRATION ENHANCED EPITAXY (MEE) AND PHASED LOCKED EPITAXY (PLE). PHASE I WILL DEVELOP THE MEE AND PLE TECHNIQUES REQUIRED TO GROW PHEMTS HAVING INGAAS CHANNELS WITH INDIUM MOLE FRACTIONS OF 40%. PHASE II WORK WILL EXTEND AND REFINE THE TECHNIQUES FOR THE MANUFACTURE OF A WIDER RANGE OF STRATEGIC ELECTRONIC MATERIALS.

Principal Investigator:

Thomas Hierl
2157585262

Business Contact:

Small Business Information at Submission:

Quantum Epitaxial Designs Inc
S Mountain Dr - Ben Franklin T Bethlehem, PA 18015

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No