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A NEW DESIGN FOR OPTICALLY FLAT AND DAMAGE FREE POLISHING OF 3 INCH DIAMETER…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
6315
Program Year/Program:
1987 / SBIR
Agency Tracking Number:
6315
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
R E A Precision Machine Co Inc
Po Box 3229 - 83 Broadway St Westford, MA 01886
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1987
Title: A NEW DESIGN FOR OPTICALLY FLAT AND DAMAGE FREE POLISHING OF 3 INCH DIAMETER GAAS AND INP WAFERS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $70,734.00
 

Abstract:

A POLISHING MACHINE CONCEPT WAS DEVISED FOR NON-ABRASIVE POLISHING OF THREE INCH DIAMETER (OR LARGER) SEMICONDUCTOR WAFERS OF GAAS, INP AND SIMILAR MATERIALS. THE POLISHING PRINCIPLE IS BASE ON A TECHNIQUE DEVELOPED BY MIT LINCOLN LABORATORY SCIENTISTS CALLED "HYDROPLANE POLISHING OF SEMICONDUCTOR CRYSTALS". THIS NEW CONCEPT, HOWEVER, DOES NOT DEPEND ON THE CENTRIFUGAL DISTRIBUTION OF THE POLISHING LIQUID, BUT RATHER ON A LEVITATION PROCESS WHICH ALLOWS FOR THE POLISHING OF VERY LARGE AREA WAFERS. THE NEW PROCESS FURTHERINFINITE CONTROL OF THE FORCE BETWEEN THE LIQUID AND THE SAMPLE TO BE POLISHED. THE ROTATION OF THE SAMPLE RELATIVE TO THE LIQUID MAY ALSO BE INDEPENDENTLY CONTROLLED. INITIAL TESTS HAVE SHOWN THAT THE LEVITATION, FORCE VARIATION BETWEEN THE SAMPLE AND LIQUID, AND INDEPENDENT SAMPLE-LIQUID ROTATION ARE SIMULTANEOUSLY FEASIBLE.

Principal Investigator:

Robert e acheson
6176927347

Business Contact:

Small Business Information at Submission:

R E A Precision Machine Co Inc
Po Box 3229 - 83 Broadway St Westford, MA 01886

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No