USA flag logo/image

An Official Website of the United States Government

Company Information:

Company Name: Robust Chip Inc.
City: Pleasanton
State: CA
Zip+4: -
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phone: (925) 847-2073

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $394,975.00 4
SBIR Phase II $2,499,535.00 3

Award List:

Efficient and Accurate Coupled Circuit and Substrate Simulation for Radiation Hard Electronics

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency / Branch: DOD / DTRA
Principal Investigator: Klas Lilja, President/CTO
Award Amount: $95,831.00
Abstract:
Robust Chip proposes to develop a unique, new technique to couple circuit simulation and numerical device simulation, for efficient, flexible, and accurate simulation of transient radiation effects at the circuit level. The technique provides the accuracy and flexibility of numerical device… More

Efficient and Accurate Coupled Circuit and Substrate Simulation for Radiation Hard Electronics

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency / Branch: DOD / DTRA
Principal Investigator: Klas Lilja, Manager
Award Amount: $749,737.00
Abstract:
The key innovation of the proposal is a novel, fast and accurate, algorithm (patent pending) to simulate substrate effects, in particular single event transients (SETs), in semiconductor circuits. This new method opens up a new capability for circuit designers to study a large set of substrate and… More

The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / DTRA
Principal Investigator: Klas Lilja, CEO
Award Amount: $99,997.00
Abstract:
The objectives of this task include: 1. Characterization of both ionizing and displacement damage radiation effects in nano-technology microelectronics to include, but not be limited to, Metal Oxide Semiconductor (MOS) ultra-deep submicron (< 90nm) silicon based circuits, silicon-germanium… More

The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency: DOD
Principal Investigator: Klas Lilja, CEO – (925) 847-2073
Award Amount: $749,988.00
Abstract:
OBJECTIVE: The objectives of this task include: 1. Characterization of both ionizing and displacement damage radiation effects in nano-technology microelectronics to include, but not be limited to, Metal Oxide Semiconductor (MOS) ultra-deep submicron (<90nm) silicon based circuits,… More

Solutions for Single-Event Effects in Ultra Deep Submicron Semiconductor Technologies Using Simulation and Layout Techniques

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: DOD
Principal Investigator: Klas Lilja, CEO – (925) 425-0820
Award Amount: $99,264.00
Abstract:
Robust Chip (RCI) and Vanderbilt University (Vanderbilt) propose a joint project to create and characterize a comprehensive, accurate, single event simulation solution for ultra scaled (45nm, 32nm, and below) CMOS technologies. The project focus is on developing a production strength single event… More

Single Event Transient Effects for Sub-65 nm Complementary Metal-Oxide Semiconductor (CMOS) Technologies

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: DOD
Principal Investigator: Klas Lilja, CEO – (925) 425-0820
Award Amount: $99,883.00
Abstract:
ABSTRACT: Robust Chip (RCI) and Vanderbilt University (Vanderbilt) propose a joint project to create and characterize a comprehensive, accurate, single event simulation solution for ultra scaled (45nm, 32nm, and below) CMOS technologies. Development work on novel layout techniques for ultra deep… More

Solutions for Single-Event Effects in Ultra Deep Submicron Semiconductor Technologies Using Simulation and Layout Techniques

Award Year / Program / Phase: 2012 / SBIR / Phase II
Agency: DOD
Principal Investigator: Klas Lilja, President, CEO – (925) 425-0820
Award Amount: $999,810.00
Abstract:
This project offers two powerful and efficient solutions to solve the mounting problems in design of radiation hard electronics: a range of ultra hard, high performance, sequential and combinatorial logic blocks based on the new, and enormously effective, LEAP RHBD layout methodology, and an… More