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NUMERICAL SIMULATION OF HIGH SPEED HETEROSTRUCTURE BIPOLAR TRANSISTORS

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
2097
Program Year/Program:
1986 / SBIR
Agency Tracking Number:
2097
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SCIENTIFIC RESEARCH ASSOC., INC.
P. O. Box 1058, 30C Hebron Avenue Glastonbury, CT 06033
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1986
Title: NUMERICAL SIMULATION OF HIGH SPEED HETEROSTRUCTURE BIPOLAR TRANSISTORS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $492,000.00
 

Abstract:

THIS DOCUMENT DISCUSSES A PROPOSED PROGRAM FOR THE TWO DIMENSIONAL NUMERICAL SIMULATION OF A HETEROJUNCTION ALGAAS/GAAS BIPOLAR TRANSISTOR WITH A WIDE-GAP EMITTER. HBT'S OFFER CONSIDERABLE REDUCTION IN SWITCHING SPEEDS AND IMPROVEMENTS IN CUT-OFF FREQUENCIES OVER THEIR HOMOJUNCTION COUNTERPARTS AND MAY ULTIMATELY PROVIDE SIGNIFICANT COMPETITION TO HIGH ELECTRON MOBILITY TRANSISTOR IN SWITCHING SPEEDS AT ROOM TEMPERATURE. HBT'S FABRICATED USING MBE TECHNOLOGY HAVE BEEN REPORTED TO OPERATE AT CUT-OFF FREQUENCIES ABOVE 10GHZ, AND VALUES AS HIGH AS 100GHZ, ARE EXPECTED FROM OPTIMIZED STRUCTURES. THE KEY TO ACHIEVING THE ANTICIPATED HIGH FREQUENCY PERFORMANCE IS THE ABILITY TO PROVIDE INFORMATION ON DEVICE CHARACTERISTICS AND OPTIMIZATION OF THE CONTROLLING PRIOR TO FABRICATION. THIS PROPOSAL ADDRESSES THE ABOVE NEEDS VIA NUMERICAL SIMULATION. IT IS PROPOSED TO EXAMINE THE ELECTRICAL CHARACTERISTICS OF AN ALGAAS/GAAS HBT VIA THE SOLUTION OF DRIFT AND DIFFUSION EQUATIONS IN TWO DIMENSIONS. ALSO ADDRESSED HERE, IS THE EFFECT OF GRADING THE HETEROSTRUCTURE BIPOLAR DEVICES.

Principal Investigator:

Harold L Grubin
2036590333

Business Contact:

Small Business Information at Submission:

Scientific Research Associates
Po Box 498 Glastonbury, CT 06033

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No