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STRUCTURE FIELD EFFECT TRANSISTORS

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
4357
Program Year/Program:
1986 / SBIR
Agency Tracking Number:
4357
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SCIENTIFIC RESEARCH ASSOC., INC.
P. O. Box 1058, 30C Hebron Avenue Glastonbury, CT 06033
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1986
Title: STRUCTURE FIELD EFFECT TRANSISTORS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $55,015.00
 

Abstract:

OF ALL THE DEVICES PROPOSED FOR HIGH SPEED OPERATION, THE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) SEEMS TO BE THE MOST PROMISING ONE. CURRENTLY, THERE IS A NEED TO EVALUATE THE DEVICE PHYSICS AND OPERATING CHARACTERISTICS OF HEMT DEVICES. THIS PROPOSAL ADDRESSED THIS ISSUE BY FOCUSING ON TWO CRITICAL QUESTIONS ON THE DESIGN OF HEMT. FIRST, HOW IS THE PERFORMANCE OF THE DEVICE, ESPECIALLY SWITCHING SPEED, INFLUENCED BY THE SOURCE AND DRAIN DIFFUSIONS? SECOND, WHAT IS THE EFFECT OF THE GATE LENGTH ON DEVICE OPERATION? THE ANSWER TO THESE QUESTIONS ARE SOUGHT IN THIS PROPOSAL VIA NUMERICAL SIMULATION THROUGH SOLUTION TO THE SEMICONDUCTOR DRIFT AND DIFFUSION EQUATIONS. SPECIFICALLY, TO DEMONSTRATE THE FEASIBILITY OF USING NUMERICAL SIMULATION AS A TOOL IN THE DESIGN OF THE HEMT, THE PROPOSAL OUTLINES A PROGRAM TO ASSESS THE OPERATION OF THE HEMT THROUGH CALCULATIONS WITH TWO DIFFERENT GATE LENGTHS AND TWO DIFFERENT SOURCE AND DRAIN DIFFUSIONS DEPTHS.

Principal Investigator:

Harold l grubin
2036590333

Business Contact:

Small Business Information at Submission:

Scientific Research Assocs Inc
Po Box 498 Glastonbury, CT 06033

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No