Silicon Carbide microwave transistors have yet to realize their full potentialwith regard to signal fidelity, junction operating temperature, and reasonablemanufacturing costs. In this proposal we present new innovative approaches ofsolving these pressing problems through the use of advanced… More

"SemiSouth proposes a proprietary technology involving the passivation of one type of shallow acceptor impurity to achieve precision compensation of the opposite type of shallow donor impurity. This Phase I feasibility demonstration represents aninnovative breakthrough in deep-level-free… More

SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combining with SiC power devices, a high level of integration,reduced parts count, reduced cost and weight… More

The goal of this proposal is to study the feasibility SiC rectifiers in high-voltage, high total current applications. Specifically, the Schottky barrier diode (SBD), JBS diode (JBS), and PiN diode device structures will be studied with strengths andweaknesses of each approach examined based on the… More

The Static Induction Transistor (SIT) is a vertical MESFET or JFET type device, which has the gates close together resulting in space charge limited current conduction. Unlike a bipolar junction transistor (BJT), the SIT is a majority carrier device, isvoltage-controlled, and often gives higher… More

The goal of this proposal is to lay the ground work for the insertion of SiC static induction transistors (SIT) in missle defense radars. The insertion of SiC SIT's would increase system reliability and power while lowering repair/logistics costs ofthese critical systems, therefore paying back the… More

SemiSouth proposes to prototype proprietary self-aligned L-band SiC Static Induction Transistors, with 400 V gate-to-drain breakdown voltage, for radar transmitters. A minimum of 14 wafers will be processed, allowing for thousands of parts to be delivered to system integrators. Parts will be… More

In this proposed work, methods to increase the growth rate for thick, low-doped drift region epilayers required for MW power switch devices are examined. Changing the process parameters (carrier and feed gas ratios, gas flow rates, pressure, temperature) to increase the growth rate are balanced… More

In coordination with other ONR and MDA sponsored SiC MESFET development, SemiSouth proposes development of an improved, L or S-band designed SiC MESFET which focuses on a self-aligned process. This self-aligned process requires development of a high-uniformity gate recess etch and an improved,… More

SiC power switch devices such as Vertical Junction Field Effect Transistors (VJFETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are being developed for power conditioning applications in a variety of rugged environments. While the SiC devices have been well characterized for… More

SiC Integrated Circuits (IC's) offer the potential for operation over a wide temperature range (77 K to 800 K), and high-radiation environments. In this proposal, we outline a program to transfer and mature patented SiC epitaxy and device technology for use in SiC JFET IC's from Mississippi State… More

A thick SiC epitaxy process was demonstrated by SemiSouth in Phase I, as the growth (or deposition) rate was boosted from 5 um/h to 20 um/h, and thickness uniformity was kept to 5% or below. In the Phase 2 effort, it is proposed that the processes be developed for production by re-designing and… More

Several new high-power, long range radar systems are under development for near-term upgrades or fielding by MDA, Navy, and Marine Corps, which will use High Voltage GaAs or new WBG Semiconductors (SiC, GaN) in the transmitter/receiver. These systems will require compact, efficient, temperature… More

This proposal is aimed at demonstrating the feasibility of a Decentralized Control based SiC Parallel DC-DC Converter Unit (DDCU) with targeted application for NASA's International Space Station Program and Satellite Power Systems. The proposed DDCU has three key features: a) "true" redundancy for… More

In the proposed development, SiC JFET control circuitry and normally-off SiC JFET power switch will be integrated in a single SiC chip that will provide digital output for driving piezoelectric, electrostatic, or electromagnetic actuators. Innovative device design, metallurgical ohmic contact and… More

A high-voltage, high-current, SiC power switch is required by the existing utility infrastructure and its need to interconnect renewable energy sources to the grid (such as wind and solar photovoltaic). Renewable energy sources require new types of equipment with challenging issues not usually… More

SemiSouth Laboratories, Inc. (SemiSouth), a leading developer and manufacturer of silicon carbide (SiC) power-electronics device technology, proposes the development of a low-cost hybrid switch based on the company's silicon carbide high-voltage junction field effect transistor (JFET) products.… More

Solid-state circuit breakers have significant advantage over electromechanically relays due to the use of various types of solid-state transistors used to control the power flow. These transistors are generally much faster than their mechanical counterparts, switching orders of magnitude, hence… More

SemiSouth Laboratories, Inc., a leading developer and manufacturer of silicon carbide (SiC) power semiconductor devices, and OptiSwitch Technology Corporation, a leading developer and manufacturer of light activated semiconductor products, propose the development of a hybrid switch using… More

SemiSouth Laboratories, Inc., a leading developer and manufacturer of silicon carbide (SiC) power semiconductor devices, OptiSwitch Technology Corporation, a leading developer and manufacturer of light activated semiconductor products, and the Center for Advanced Vehicular Systems (CAVS) at… More