USA flag logo/image

An Official Website of the United States Government

Vertical SiC Static Induction Transistor for L-band

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
53129
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
01-0254
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SemiSouth Laboratories
201 Research Blvd. Starkville, MS -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2003
Title: Vertical SiC Static Induction Transistor for L-band
Agency / Branch: DOD / MDA
Contract: N0001402C0217
Award Amount: $750,000.00
 

Abstract:

The Static Induction Transistor (SIT) is a vertical MESFET or JFET type device, which has the gates close together resulting in space charge limited current conduction. Unlike a bipolar junction transistor (BJT), the SIT is a majority carrier device, isvoltage-controlled, and often gives higher breakdown voltage and input impedance. While most SIT development has occurred in Si, renewed interest in the use of SiC SIT's over the past 10 years has occurred because of SiC's superior material properties. Byuse of SiC, it is possible to increase the voltage (and thus power) rating of high-frequency amplifiers, and increase the power density by a factor of 4 to 10 in UHF to S-band transistors.In this SBIR phase II project, a new SiC SIT for L-band power applications will be created. Submicron dimensions needed to get useful gain in L- and S-band will be obtained by use a self-aligned process, which employs the same mask for the source fingerdefinition, source contact, and formation of the gate.The proposed SiC SIT will incorporate a self-aligned process which will provide significant improvement in yield and device performance. L-band power applications will benefit from a SiC SIT because of the higher power density, higher operating voltage andhigher projected operating temperature of SiC devices. Potential commercial applications include radar systems and cellular base stations.

Principal Investigator:

Igor Sankin
Senior Device Engineer
6623247607
igor.sankin@semisouth.com

Business Contact:

Kelly H. Cutshall
Comptroller
6623247607
kelly.cutshall@semisouth.com
Small Business Information at Submission:

SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B Starkville, MS 39759

EIN/Tax ID: 640928152
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No