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Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2002Title: Radiation and temperature-tolerant SiC JFET technologies for Space-Based SystemsAgency / Branch: DOD / MDAContract: F33615-02-M-5429Award Amount: $70,000.00
Abstract:
SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combining with SiC power devices, a high level of integration,reduced parts count, reduced cost and weight in satellite systems. SemiSouth Laboratories, Inc. plans to transfer critical JFET IC technology developed at Mississippi State University to prototype status, and work with key DoD customers to provide earlyadaptation of the technology. Will further SiC I.C. development, especially in integrated control electronics which are needed for high-temperature sensors and power modulators under distributed control.Small Business Information at Submission:Research Institution Information:Semisouth Laboratories
One Research Blvd., Suite 201B Starkville, MS 39759EIN/Tax ID: 010568116DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: NoMississippi State University
Box 9571 - ECE Department, Hardy Road
Mississippi State, MS 39762Contact: J.b. CasadyContact Phone: (662) 325-3669RI Type: Nonprofit college or university
Award Information
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Agency: Department of Defense |
Branch: Missile Defense Agency |
Award ID: 56125 |
Program Year/Program: 2002 / STTR |
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Agency Tracking Number: 02-0119T |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |