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Insertion of an L-band SiC Static Induction Transistor into Missile Defense…

Award Information

Department of Defense
Missile Defense Agency
Award ID:
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
SemiSouth Laboratories
201 Research Blvd. Starkville, MS -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2003
Title: Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars
Agency / Branch: DOD / MDA
Contract: F3361503M5402
Award Amount: $70,000.00


The goal of this proposal is to lay the ground work for the insertion of SiC static induction transistors (SIT) in missle defense radars. The insertion of SiC SIT's would increase system reliability and power while lowering repair/logistics costs ofthese critical systems, therefore paying back the cost of development. Phase two of this effort if funded, would supply sample quantities of devices to the system contractor for adaptation and design prototyping, while phase three would carry out theactual quantity manufacturing and system insertion. SemiSouth Laboratories has patent pending technology developed for new device structures and processes needed for high-performance SiC discrete devices. From phase one into phase two, specific device parameter issues relating to an optimized deviceinsertion will be addressed. Fabrication/processing issues to be examined include economical and high-performance SiC epitaxy growth, 75 mm wafer processing, in-situ process metrology for some self-aligned steps, and statistical process control for keyunit process steps. These potential improvements will be analyzed from a manufacturing standpoint, and plans will be developed to improve the most important steps to ready the device for pilot production and system insertion in Phases II and III.Potential commercial applications of this technology include high-voltage oscillators for compact lighting ballasts, cellular phone base station transmitters, and high definition television broadcast transmitters. General anticipated benefits are alsoderived from increasing the industrial base of SiC discrete device and epitaxy suppliers, which will provide market infrastructure to help support DoD and commercial system insertion.

Principal Investigator:

Janna B. Dufrene
Device Engineer

Business Contact:

Kelly H. Cutshall
Small Business Information at Submission:

One Research Blvd., Suite 201B Starkville, MS 39759

EIN/Tax ID: 010568116
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No