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High Current and Voltage Diodes for Power Switching

Award Information

Department of Defense
Office of the Secretary of Defense
Award ID:
Program Year/Program:
2002 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
SemiSouth Laboratories
201 Research Blvd. Starkville, MS -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2002
Title: High Current and Voltage Diodes for Power Switching
Agency / Branch: DOD / OSD
Contract: N00014-03-M-0058
Award Amount: $100,000.00


The goal of this proposal is to study the feasibility SiC rectifiers in high-voltage, high total current applications. Specifically, the Schottky barrier diode (SBD), JBS diode (JBS), and PiN diode device structures will be studied with strengths andweaknesses of each approach examined based on the system application needs and SiC material maturity. The insertion of SiC into high total current switch mode power supply (SMPS) motor controllers would significantly increase efficiency of electricvehicles. In addition, SiC rectifiers would allow for increased switching frequency of the SMPS, which would lead to smaller and lighter passive circuit components. Potential commercial applications of this technology include high total current SMPS foruse in electric, hybrid-electric vehicles. General anticipated benefits are also derived from increasing the industrial base of SiC discrete device and epitaxy suppliers, which will provide market infrastructure to help support DoD and commercial systeminsertion.

Principal Investigator:

Igor Sankin
Senior Device Engineer

Business Contact:

Kelly H. Cutshall
Small Business Information at Submission:

Semisouth Laboratories
One Research Blvd., Suite 201B Starkville, MS 39759

EIN/Tax ID: 010568116
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No