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Development of Silicon Carbide Thick Epitaxy with High Growth Rate and…

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
67359
Program Year/Program:
2005 / SBIR
Agency Tracking Number:
D032-0490
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SemiSouth Laboratories
201 Research Blvd. Starkville, MS -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2005
Title: Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications
Agency / Branch: DOD / DARPA
Contract: FA8650-05-C-7209
Award Amount: $750,000.00
 

Abstract:

A thick SiC epitaxy process was demonstrated by SemiSouth in Phase I, as the growth (or deposition) rate was boosted from 5 um/h to 20 um/h, and thickness uniformity was kept to 5% or below. In the Phase 2 effort, it is proposed that the processes be developed for production by re-designing and optimizing the reactor susceptor in a research reactor to minimize cost and risk. Specifically, the surface morphology will be improved to near perfect finish as a result of this process development, while maintaining a very high (15-30 um/h) growth rate needed for economical production and minimizing risk to production reactor systems. Once optimized, the process will be transferred to the production system and offered as a product, enabling a MegaWatt class of SiC devices to emerge in the marketplace.

Principal Investigator:

Janna B. Casady
SiC Device Program Manage
6623247607
janna.casady@semisouth.com

Business Contact:

Brenda Temple
Senior Corporate Accounta
6623247607
brenda.temple@semisouth.com
Small Business Information at Submission:

SEMISOUTH LABORATORIES
201 Research Blvd. Starkville, MS 39759

EIN/Tax ID: 010568116
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No