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Thick SiC Epitaxy Development for MegaWatt Switching Applications

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
67359
Program Year/Program:
2004 / SBIR
Agency Tracking Number:
D032-0490
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SemiSouth Laboratories
201 Research Blvd. Starkville, MS -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2004
Title: Thick SiC Epitaxy Development for MegaWatt Switching Applications
Agency / Branch: DOD / USAF
Contract: FA8650-04-M-7105
Award Amount: $99,000.00
 

Abstract:

In this proposed work, methods to increase the growth rate for thick, low-doped drift region epilayers required for MW power switch devices are examined. Changing the process parameters (carrier and feed gas ratios, gas flow rates, pressure, temperature) to increase the growth rate are balanced with keeping process parameters such that surface morphology is not compromised is the primary goal of this work. Additionally, maintaining dopant control, low background impurity, and the possibility of closing micropipe defects are examined to maintain the quality of the thick epitaxy layers. This work is done in a horizontal configuration reactor, designed for SiC epitaxy growth.

Principal Investigator:

Jie Zhang
Director of Epitaxy Produ
6623247607
jie.zhang@semisouth.com

Business Contact:

Kelly Cutshall
Treasurer
6623247607
kelly.cutshall@semisouth.com
Small Business Information at Submission:

SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B Starkville, MS 39759

EIN/Tax ID: 010568116
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No