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Self-aligned L-band SiC Power MESFET with Improved Current Stability for…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
69605
Program Year/Program:
2004 / SBIR
Agency Tracking Number:
B041-039-1473
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SemiSouth Laboratories
201 Research Blvd. Starkville, MS -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2004
Title: Self-aligned L-band SiC Power MESFET with Improved Current Stability for Ballistic Missile Defense Systems
Agency / Branch: DOD / MDA
Contract: FA8650-04-M-5424
Award Amount: $100,000.00
 

Abstract:

In coordination with other ONR and MDA sponsored SiC MESFET development, SemiSouth proposes development of an improved, L or S-band designed SiC MESFET which focuses on a self-aligned process. This self-aligned process requires development of a high-uniformity gate recess etch and an improved, smoother surface silicide process. This work complements ongoing work involving a major prime contractor on SiC MESFET's for long-range radar systems, where SemiSouth is focused on developing highly uniform MESFET epitaxy layers, and SiC MESFET passivation schemes.

Principal Investigator:

Igor Sankin
Senior Device Engineer
6623247607
igor.sankin@semisouth.com

Business Contact:

Janna B. Casady
SiC Device Program Manage
6623247607
janna.casady@semisouth.com
Small Business Information at Submission:

SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B Starkville, MS 39759

EIN/Tax ID: 010568116
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No