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Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit…

Award Information

Department of Defense
Missile Defense Agency
Award ID:
Program Year/Program:
2004 / STTR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
SemiSouth Laboratories
201 Research Blvd. Starkville, MS -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2004
Title: Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments
Agency / Branch: DOD / MDA
Contract: HQ0006-04-C-7106
Award Amount: $100,000.00


SiC power switch devices such as Vertical Junction Field Effect Transistors (VJFETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are being developed for power conditioning applications in a variety of rugged environments. While the SiC devices have been well characterized for high-temperature behavior, much less data is available for radiation effects, including gamma and proton radiation. Here, SemiSouth, Auburn, and Georgia Tech propose testing of SemiSouth SiC VJFETs and Auburn MOSFETs over a temperature range of ambient to 300C, both DC and dynamic testing, done pre- and post-radiation test. Gamma radiation will be from a Co 60 source, at 1.33 MeV, and the proton radiation will be from 1-4 MeV and 63 MeV. The analyis will help steer the development of radiation-hardened SiC switches in Phase II.

Principal Investigator:

Janna B. Casady
SiC Device Program Manager

Business Contact:

Brenda Temple
Senior Corporate Accountant
Small Business Information at Submission:

One Research Blvd., Suite 201B Starkville, MS 39759

EIN/Tax ID: 010568116
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Auburn University
310 Leach Science Center
Auburn, AL 36849
Contact: John Williams
Contact Phone: (334) 844-4678
RI Type: Nonprofit college or university