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Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
69420
Program Year/Program:
2004 / STTR
Agency Tracking Number:
B2-0551
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SemiSouth Laboratories
201 Research Blvd. Starkville, MS -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2004
Title: Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems
Agency / Branch: DOD / MDA
Contract: FA8650-04-C-5435
Award Amount: $500,000.00
 

Abstract:

SiC Integrated Circuits (IC's) offer the potential for operation over a wide temperature range (77 K to 800 K), and high-radiation environments. In this proposal, we outline a program to transfer and mature patented SiC epitaxy and device technology for use in SiC JFET IC's from Mississippi State University to SemiSouth Laboratories. The result will be precise controlled epitaxy layers (doping and thickness) in SiC, with abrupt transitions between n-type channel and heavily doped p-type gate regions, as well as demonstration of JFET IC's in SiC.

Principal Investigator:

Igor Sankin
Senior Device Engineer
6623247607
Igor.Sankin@SemiSouth.com

Business Contact:

Kelly Cutshall
Treasurer
6623247607
Kelly.Cutshall@SemiSouth.com
Small Business Information at Submission:

SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B Starkville, MS 39759

EIN/Tax ID: 010568116
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Mississippi State University
PO Box 6156 - Sponsored Prog, Mississippi State Un
Mississippi State, MS 39762
Contact: Robyn Remotigue
Contact Phone: (662) 325-7397
RI Type: Nonprofit college or university