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Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 2
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Fiscal Year: 2004Title: Radiation and temperature-tolerant SiC JFET technologies for Space-Based SystemsAgency / Branch: DOD / MDAContract: FA8650-04-C-5435Award Amount: $500,000.00
Abstract:
SiC Integrated Circuits (IC's) offer the potential for operation over a wide temperature range (77 K to 800 K), and high-radiation environments. In this proposal, we outline a program to transfer and mature patented SiC epitaxy and device technology for use in SiC JFET IC's from Mississippi State University to SemiSouth Laboratories. The result will be precise controlled epitaxy layers (doping and thickness) in SiC, with abrupt transitions between n-type channel and heavily doped p-type gate regions, as well as demonstration of JFET IC's in SiC.Small Business Information at Submission:Research Institution Information:SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B Starkville, MS 39759EIN/Tax ID: 010568116DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: NoMississippi State University
PO Box 6156 - Sponsored Prog, Mississippi State Un
Mississippi State, MS 39762Contact: Robyn RemotigueContact Phone: (662) 325-7397RI Type: Nonprofit college or university
Award Information
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Agency: Department of Defense |
Branch: Missile Defense Agency |
Award ID: 69420 |
Program Year/Program: 2004 / STTR |
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Agency Tracking Number: B2-0551 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |