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Company Information:

Company Name: Sensor Electronic Technology, Inc.
City: Columbia
State: SC
Zip+4: 29209-
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: http://www.s-et.com
Phone: (803) 647-9757

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $4,099,455.00 50
SBIR Phase II $9,320,039.00 14
STTR Phase I $1,137,521.00 12
STTR Phase II $2,898,473.00 4

Award List:

A MULTI-CHANNEL SHORT RANGE BIO-MEDICAL TELEMETRY SYSTEM IS DESCRIBED WHICH USES INFRA-RED TRANSMISSION AND A VERY EFFICIENT AND INEXPENSIVE MODULATION AND DEMODULATION SYSTEM, WELL SUITED FOR COMPUTER DATA PROCESSING.

Award Year / Program / Phase: 1984 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Edwin langberg, ph.d.
Award Amount: $48,000.00
Abstract:
A multi-channel short range bio-medical telemetry system is described which uses infra-red transmission and a very efficient and inexpensive modulation and demodulation system, well suited for computer data processing. the system overcomes the limited frequency allocation and interference problems… More

MULTIPOINT TACTILE ARRAY SYSTEM

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency: HHS
Principal Investigator: Edwin Langberg Phd
Award Amount: $50,000.00

MULTIPOINT TACTILE ARRAY SYSTEM

Award Year / Program / Phase: 1988 / SBIR / Phase II
Agency: HHS
Principal Investigator: Edwin Langberg Phd
Award Amount: $493,000.00
Abstract:
For a multipoint tactile array system, two actuator designs are proposed: a magnetic and a pvdf design. the magnetic design is best suited for pin-to-pin spacing of 3 mm and larger. pin travel amplitude of 2 mm (and longer if needed)can be readily implemented, and typical frequency response is… More

ELECTROACOUSTICAL COMPENSATION HEARING AID

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency: HHS
Principal Investigator: Edwin Langberg
Award Amount: $50,000.00

ELECTROACOUSTICAL COMPENSATION HEARING AID

Award Year / Program / Phase: 1994 / SBIR / Phase II
Agency: HHS
Principal Investigator: Edwin Langberg
Award Amount: $500,000.00
Abstract:
The applicant organization has discovered and experimentally observed that an electroacoustical compensation (elac) circuit counteracts the occlusion effect experienced by hearing aid weare s of unvented hearing aids. unvented hearing aids with the elac circuit show promise for a significant… More

EFFICIENT TACTOR FOR TACTILE AIDS

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency: HHS
Principal Investigator: Langberg, edwin
Award Amount: $100,000.00

N/A

Award Year / Program / Phase: 1999 / SBIR / Phase II
Agency: HHS
Principal Investigator: Langberg edwin
Award Amount: $750,001.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $64,628.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $64,628.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $64,628.00

N/A

Award Year / Program / Phase: 2000 / STTR / Phase I
Agency / Branch: DOD / NAVY
Research Institution: SOUTH CAROLINA RESEARCH INSTITUTE
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $69,978.00
RI Contact: R. M. Bell

Solar-Blind AlInGaN Optoelectronic Transistor Arrays

Award Year / Program / Phase: 2001 / STTR / Phase II
Agency / Branch: DOD / NAVY
Research Institution: SOUTH CAROLINA RESEARCH INSTITUTE
Principal Investigator: Remis Gaska
Award Amount: $398,784.00
RI Contact: Bill Harris
Abstract:
We propose to develop solar-blind AlInGaN-based optoelectronic field effect transistor arrays and a prototype solar-blind imaging system by combining our novel Strain/Energy Band Engineering (SEBE) technology, selective area growth technique, and devicepassivation for the leakage current… More

AlInGaN-based Crested Quantum Tunneling Barriers for Advanced Data Storage Systems

Award Year / Program / Phase: 2001 / STTR / Phase I
Agency / Branch: DOD / USAF
Research Institution: SUNY AT STONY BROOK
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $99,200.00
RI Contact: Ivar Strand
Abstract:
We propose a new way to reach a dramatic speed-up of floating gate memories by using quantum-mechanical tunneling through specially shaped (

Projectile Inertial Navigator from COTS Instruments

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $99,624.00
Abstract:
We propose to develop and commercialize GaN-based blue and near UV light integrated optoelectronics technology for modulation, switching, and distribution of blue and near-UV light. This technology will include integrated optical waveguides, splitters,and electrooptical modulators integrated with… More

Enhanced Electron Mobility GaN Transistor (EEMT)

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $64,919.00
Abstract:
Our technical approach is based on a uniquely large (close to 3 eV for GaN) energy band shift in III-Nitride based p-n junctions. We propose to enhance electron mobility in the n-doped MESFET channel by localizing electrons at the surface using a lightlyp-doped GaN buffer layer (patent pending).… More

AlInGaN-based Dual Ultraviolet/Infrared Detectors

Award Year / Program / Phase: 2001 / STTR / Phase I
Agency / Branch: DOD / ARMY
Research Institution: SOUTH CAROLINA RESEARCH INSTITUTE
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $99,200.00
RI Contact: Steven Etheredge
Abstract:
We propose to develop dual infra-red UV solar-blind AlInGaN-based photodetectors by combining our novel Strain/Energy Band Engineering (SEBE) technology, selective area growth technique, and device passivation for the leakage current reduction with theMultiple Quantum Well design for using… More

Microwave GaN MESFET on Conducting SiC Substrates

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $64,601.00
Abstract:
We will develop and demonstrate high power GaN HDMESFETs grown over conducting 6H-SiC substrates for effective thermal management. The SiC substrate will be separated from the device channel by insulating GaN buffer layer thick enough to have thecapacitance between the substrate and the device… More

High Power AlN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Xuhong Hu, Research Scientist
Award Amount: $69,706.00
Abstract:
We propose to develop a new approach to recessed gate/active passivation AlGaN/GaN FET technology for the development of high-power AlN/AlGaN/GaN recessed gate Heterostructure Field Effect Transistors (HFET) for microwave amplifiers. We will use ourproprietary technology of the textured AlN thin… More

High Precision in-situ Thickness Control for Growing AlN/GaN/InN-based High Power Transistor Structures

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Ohalid Fareed, Research Scientist
Award Amount: $69,740.00
Abstract:
We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. This technology is based on the development of a reproducibleMOCVD epitaxial layer growth technology using… More

Development of in-situ Temperature and Bowing Control Tools for AlInGaN-based High Power Transistor Structures

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Ohalid Fareed, Research Scientist
Award Amount: $69,740.00
Abstract:
We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. The technology will be based on the development of a reproducibleMOCVD epitaxial layer growth technology… More

AlInGaN-based Epi for High Power Double Heterostructure Field Effect Transistors On Semi-insulating 6H-SiC Substrates

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Qhalid Fareed, Research Scientisth
Award Amount: $69,706.00
Abstract:
"We will develop commercially viable quaternary AlInGaN-based epitaxial wafer technology on semi-insulating 6H-SiC for manufacturing of reliable high microwave power transistors and amplifiers for new generation of radars and wireless communication systems.We will use our proprietary growth… More

High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Xuhong Hu, Research Scientist
Award Amount: $69,838.00
Abstract:
We propose to evaluate the feasibility of single crystal bulk AlN substrates for the development of high-power, high-frequency III-Nitride Double Heterostructure Field Effect Transistors (DHFETs) as building blocks for microwave (X-band and higher)amplifiers. Higher reliability and increased… More

AlInGaN-based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $98,234.00
Abstract:
We propose to develop technology for manufacturing deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250 nm. Blue and near UV (wavelength > 370 nm) light emitters are based on GaN/InGaN material system. In Phase I, wewill demonstrate LD structures with… More

High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Xuhong Hu, Research Scientist
Award Amount: $749,678.00
Abstract:
We propose to develop commercially viable material growth technology for manufacturing of AlInGaN-based Double Heterostructure Field Effect Transistor (DHFET) epitaxial wafers on single crystal bulk AlN substrates. The epitaxial wafers will be optimizedfor the development of high-power, high… More

High Temperature AlInGaN-based Heterostructure Field Effect Transistors Over Intrinsic Semi-insulating 6H-SiC Substrates

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Qhalid Fareed, Research Scientist
Award Amount: $69,707.00
Abstract:
We will develop commercially viable quaternary AlInGaN-based epitaxial wafer technology on semi-insulating 6H-SiC for manufacturing of reliable high microwave power, high operation temperature (300 oC and higher) transistors and amplifiers for newgeneration of T/R modules. We will use our… More

GaN-AlInGaN Induced Base Transistors for High Power Microwave Amplifiers

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Xuhong Hu, Research Scientist
Award Amount: $69,902.00
Abstract:
We propose to develop a new majority carrier device, Induced Base Transistor (IBT), which will use a very high density of the two-dimensional electron gas in GaN in order to dramatically reduce the base spreading resistance. We will use selective areagrowth technique for the deposition of emitter.… More

High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Xuhong Hu, Research Scientist
Award Amount: $69,929.00
Abstract:
We propose to a new approach AlGaN/GaN Heterostructure Field Effect Transistors (HFET) technology for reliable, stable, high-power microwave amplifiers using novel recessed gate/active passivation design. Under certain process conditions of BCl3 RIEetching for optimized InGaN films, the In etch… More

Hybrid Growth of High Quality AlInGaN-based Transistor Wafers on 6H-SiC

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Qhalid Fareed, Research Scientist
Award Amount: $69,933.00
Abstract:
We will develop and scale-up a hybrid AlGaN/GaN Heterostructure Field Effect Transistor (HFET) wafer growth technology, which combines conventional MOCVD growth with our novel Pulsed Atomic Layer Epitaxy (PALE) deposition technique. In PALE deposition ofAlGaN-based heterostructures the metalorganic… More

Growth of thick AlGaN epitaxial layer for High Power Heterostructure Field Effect Transistors On Semi-insulating 6H-SiC Substrates

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Qhalid Fareed, Research Scientist
Award Amount: $69,933.00
Abstract:
Increasing the GaN and AlGaN thickness is crucial for improved material quality and, thus, increased microwave output and enhanced reliability of high-power devices. We will use our proprietary growth technology and unique buffer layer design to depositthick GaN and AlGaN templates for quaternary… More

Trap Engineering Technology for High-Reliability AlInGaN-based HFETs

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Xuhong Hu, Research Scientist
Award Amount: $69,542.00
Abstract:
The goal of this program is to develop commercially viable epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules using trap engineering technology. The newgeneration of III-Nitride HFETs will be less… More

Solving Reliability and Stability Problems for AlGaN/GaN Heterostructure Field Effect Transistors using BCB Passivation Technology

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Xuhong Hu, Research Scientist
Award Amount: $69,929.00
Abstract:
We propose to develop a new technology to AlGaN/GaN Heterostructure Field Effect Transistors (HFET) using benzocyclobutene (BCB) surface passivation process to improve microwave power and power added efficiency for the development of reliable and stablehigh-power AlGaN/GaN HFET microwave amplifiers.… More

Plasma Wave Electronics

Award Year / Program / Phase: 2003 / STTR / Phase I
Agency / Branch: DOD / ARMY
Research Institution: RENSSELAER POLYTECHNIC INSTITUTE
Principal Investigator: Yuriy Bilenko, Senior Scientist
Award Amount: $99,946.00
RI Contact: Richard E. Scammel
Abstract:
Terahertz plasma wave detectors and emitters utilizing the high-density 2-D electrons in submicron AlGaInN/GaN-based Quantum Well Heterostructure Field Effect Transistors (QW-HFETs) with high sensitivity levels for the sensing of terahertz (THz) frequencyelectromagnetic radiation are proposed The… More

AlInGaN-Based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates

Award Year / Program / Phase: 2004 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $1,150,015.00
Abstract:
To develop technology for manufacturing of deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250nm.

Plasma Wave Electronics

Award Year / Program / Phase: 2004 / STTR / Phase II
Agency / Branch: DOD / ARMY
Research Institution: Rensselaer Polytechnic Institute
Principal Investigator: Yuriy Bilenko, Senior Scientist
Award Amount: $749,886.00
RI Contact: Richard E. Scammel
Abstract:
Terahertz plasma wave detectors and emitters utilizing the high-density 2-D electrons in submicron AlGaInN/GaN-based Quantum Well Heterostructure Field Effect Transistors (QW-HFETs)with high-sensitivity levels for the sensing of terahertz (THz) frequency electromagnetic radiation are proposed and… More

Highly Efficient MOSHFET Based X-band Transmitter-Switch Module

Award Year / Program / Phase: 2004 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: University of South Carolina
Principal Investigator: Yuriy Bilenko, Senior Scientist
Award Amount: $99,899.00
RI Contact: Steve Etheredge
Abstract:
The output power and power added efficiency are the key performance parameters of modern transmitter/receiver (T/R) modules. The optimization of these parameters depends mostly on the RF characteristics of the active elements used in the T/R module output stages. GaAs FETs and HFETs that are… More

Development of Multi-Wafer Growth Reactor With Migration Enhanced MOCVD Capability for AlInGaN-based Transistor Wafer Production

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $99,642.00
Abstract:
SET will develop commercially viable large area multi-epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules.

Ultraviolet AlGaN-based Avalanche Photo Diode Grown over Single Crystal Bulk AlN Substrates

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency: NASA
Principal Investigator: Yuriy Bilenko, Principal Investigator
Award Amount: $69,904.00
Abstract:
Premature breakdown is a key obstacle in developing AlGaN-based avalanche photo diodes (APD) for ultraviolet (UV) light detection. Novel materials growth techniques, such as Hydride Vapor Phase Epitaxy (HVPE) allows for reduction of dislocation density only to approximately 10^7 cm-2. In order to… More

High Power Microwave Limiters based on GaN Technology

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Thomas Katona, Research Scientist
Award Amount: $69,758.00
Abstract:
We propose to develop power limiter based on Schottky diodes over AlGaN/GaN structure. The limiters would have the capability to integrate with AlGaN/GaN transistors, which is a good candidate for next-generation power amplifiers. The microwave noise behavior of GaN-based transistors is also similar… More

Large Periphery AllnGaN-Gan MOSHFET Device For High Power X-Band Microwave Amplifiers

Award Year / Program / Phase: 2005 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $908,800.00
Abstract:
We propose to develop submicron gate large periphery AllnGaN-Gan based metal-oxide semiconductor heterojunction field-effect transistors (MOSHFET) as a building block for high-power (>20W), high frequency (x-band) amplifiers.

InGaN-Channel Heterostructure Field Effect Transistor With Double Recessed Gate for Improved RF Performance

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Thomas M. Katona, R&D Program Manager
Award Amount: $119,959.00
Abstract:
We propose a new approach for fabrication of reliable, high breakdown voltage InGaN-channel transistors for next generation radars and communications systems. Double recessed gate design enabled to increase breakdown voltage, alleviate non-ideal effects, and suppressing current instabilities and… More

High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Thomas Katona, R & D Program Manager
Award Amount: $0.00
Abstract:
Sensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the recessed gate is such that the gate metal is CLOSER to the channel near the drain edge of the… More

High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer

Award Year / Program / Phase: 2005 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: Thomas Katona, R & D Program Manager
Award Amount: $749,919.00
Abstract:
Sensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the recessed gate is such that the gate metal is CLOSER to the channel near the drain edge of the… More

SBIR PHASE I: High Power Deep UV LED-Based Lamps

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency: NSF
Principal Investigator: Thomas M. Katon, Mr
Award Amount: $99,904.00
Abstract:
This Small Business Innovation Research Phase I research project aims to develop high power UV LED based lamps for use in water/air/food sterilization/purification, bio-aerosol detection, and laboratory measurement systems. There are currently no portable, rugged, long-lifetime, non-toxic sources of… More

Novel GaN-Based HFET Sources and Amplifiers for Millimeter-Wave Applications

Award Year / Program / Phase: 2005 / STTR / Phase I
Agency / Branch: DOD / ARMY
Research Institution: RENSELLAER POLYTECHNIC INSTITUTE
Principal Investigator: Thomas Katona, R & D Program Manager
Award Amount: $99,976.00
RI Contact: Michael Shur
Abstract:
We propose to develop GaN HFET based sources with enhanced RF operation characteristics at millimeter wave frequencies and beyond by utilizing combination of our novel plasma wave approach and newly observed electron-transit-time effects. Electron-transit-time effects in the saturation regime of… More

Gradually buffered, delta-doped AlGaN/GaN/AlGaN Heterostructure Field-Effect Transistors

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Qhalid Fareed, Senior Growth Engineer
Award Amount: $99,867.00
Abstract:
New structure GaN-based field effect transistors (FETs) are proposed to solve the problem. A composition graded buffer, aiming at eliminating dislocations arising from hetero-epitaxy interface and suppressing channel electrons spillover under negative gate bias, a Si-delta-doped GaN layer just below… More

InGaN-Channel Heterostructure Field Effect Transistor With Double Recessed Gate for Improved RF Performance

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Thomas Katona, R & D Program Manager
Award Amount: $729,791.00
Abstract:
Sensor Electronic Technology Inc. proposes to develop a new epitaxial layer design with ternary (InGaN) and quaternary (AlInGaN) stop etch layers for double recess device fabrication. We already demonstrated significant improvement in the RF performance of AlGaN/InGaN/AlGaN/GaN-based HFETs with the… More

SBIR Phase II: High Power Deep UV LED-Based Lamps

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency: NSF
Principal Investigator: Thomas M. Katona, Mr
Award Amount: $499,704.00
Abstract:
This Small Business Innovation Research (SBIR) Phase II project will result in solid-state high power UV LED based lamps for use in water/air/food sterilization/purification, bio-aerosol detection, bio-medical instrumentation, and laboratory measurement systems. Currently there are no portable,… More

MEMOCVD Growth of AlGaN Heterojunctions for Advanced UV Photodetectors

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency: NASA
Principal Investigator: Jianping Zhang, Principal Investigator
Award Amount: $69,953.00
Abstract:
Sensor Electronic Technology, Inc. (SET) proposes to develop ultraviolet detectors for focal plane arrays based on wide-bandgap semiconductor materials. Direct gap III?N AlInGaN materials are the only materials capable of combining a high sensitivity for detecting UV radiation with a sharp cutoff… More

Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices

Award Year / Program / Phase: 2006 / STTR / Phase I
Agency / Branch: DOD / ARMY
Research Institution: UNIV. OF SOUTH CAROLINA
Principal Investigator: Qhalid Fareed
Award Amount: $99,815.00
RI Contact: Asif Khan
Abstract:
GaN-based electronic and optoelectronic devices have demonstrated superior properties for applications involving visible and ultraviolet light emitting diodes (LEDs), laser diodes, and high-power electronic devices. Despite the significant improvement in the performance of these devices, they still… More

SBIR Phase I: Growth of Bulk AlGaN Substrates Using a Modified Hydride Vapor Phase Epitaxy (HVPE) Reactor

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency: NSF
Principal Investigator: Thomas M. Katona, Mr
Award Amount: $99,962.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will develop bulk AlGaN substrates for advanced III-Nitride based semiconductor devices. The substrates will be grown by a modified hydride vapor phase epitaxy (HVPE) technique to produce thick, low dislocation density, lattice matched… More

SBIR Phase I: UV LED Based Water/Wastewater Point-of-Use Purification System

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency: NSF
Principal Investigator: Thomas M. Katona, Mr
Award Amount: $99,976.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project proposes to develop ultraviolet light emitting diode (LED) based point-of-use water and wastewater sterilization reactors. UV radiation has been shown to be one of the most effective methods for purification/sterilization of… More

Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Nezih Pala, Research Scientist
Award Amount: $69,958.00
Abstract:
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Unlike RF switches based on regular semiconductor devices, key characteristics of properly… More

High efficiency deep green light emitting diode

Award Year / Program / Phase: 2007 / STTR / Phase I
Agency / Branch: DOD / ARMY
Research Institution: RENSSELAER POLYTECHNIC INSTITUTE
Principal Investigator: Jinwei Yang, Chief Scientist
Award Amount: $99,919.00
RI Contact: Michael Shur
Abstract:
Sensor Electronic Technology, Inc. proposes to use QD-like fluctuations of InGaN QW with controllable spatial distribution for high efficiency green LEDs. We will investigate both theoretically and experimentally the performance of green InGaN MQW structures with fluctuations of composition and… More

Hybrid CMOS/Nanodevice Integrated Circuits

Award Year / Program / Phase: 2007 / STTR / Phase I
Agency / Branch: DOD / USAF
Research Institution: STONY BROOK UNIV.
Principal Investigator: Nezih Pala, Research Scientist
Award Amount: $99,789.00
RI Contact: Lydia Chabza
Abstract:
Ultra-dense integrated circuits with sub-10-nm features would provide enormous benefits for all information technologies, including computing, networking, and signal processing. However, it is widely accepted that a radical paradigm shift from purely CMOS technology to hybrid CMOS/nanodevice… More

SBIR Phase I: Hybrid Precursor HVPE Growth of AlGaN

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency: NSF
Principal Investigator: Jinwei L. Yang, PhD
Award Amount: $99,768.00
Abstract:
This Small Business Innovation Research Phase I Project proposes to develop a new epitaxial growth process for production of long-lasting (lifetime > 20,000 hours), high-efficiency (wall-plug efficiency > 10%) deep ultraviolet light emitting diodes (DUV LEDs) based on III-Nitride materials. Due to… More

High-Power Integrated Radio Frequency (RF) Switches for Joint Tactical Radio Systems (JTRS)

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Remis Gaaska, President and CEO
Award Amount: $69,986.00
Abstract:
The proposal calls for development of novel type of RF switches for JTRS using patented III-Nitride insulated gate heterostructure field-effect transistors (MOSHFETs). III-Nitride MOSHFETs are excellent candidates for high-power RF stages of JTRS. They possess the highest power densities, highest… More

High Power AlInGaN-Based Deep Ultraviolet Light Emitting Diodes

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Jinwei Yang, Chief Scientist
Award Amount: $69,767.00
Abstract:
Two complementary approaches to develop next generation of large area, high-efficiency and high-power deep ultraviolet light emitting diodes (DUV LED) are being proposed. Firstly, due to the lack of adequate quality native substrates, DUV LEDs are made from heteroepitaxial AlGaN films grown on… More

SBIR Phase I: High quality AlGaN layers by fast growth rate MEMOCVD

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NSF
Principal Investigator: Max Shatalov, PhD
Award Amount: $99,364.00
Abstract:
This Small Business Innovation Research Project will develop an innovative approach for epitaxial deposition of high quality thick (Al)(In)(Ga)N layers with low dislocation density. Accomplishment of the proposed effort will provide technology for next generation UV LED structures, which currently… More

SBIR Phase I: UV LED Lamp Based Water Disinfection for POU Compact Purification Systems

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NSF
Principal Investigator: Max Shatalov, PhD
Award Amount: $99,499.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will develop innovative water disinfection unit based on solid state UV LED lamps for compact point-of-use and point-of-entry water purification reactors. Accomplishment of the proposed research will result in compact semiconductor LED… More

SBIR Phase I: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NSF
Principal Investigator: Max Shatalov, PhD
Award Amount: $137,331.00
Abstract:
This Small Business Innovation Research Project will develop next generation high power deep ultraviolet light emitting diodes with high quality p-type AlInGaN layers with digital doping control. Advancements in AlInGaN material system and device technology have resulted in commercially viable UV… More

Hybrid CMOS/Nanodevice Integrated Circuits

Award Year / Program / Phase: 2009 / STTR / Phase II
Agency / Branch: DOD / USAF
Research Institution: Stony Brook University
Principal Investigator: Xuhong Hu, Research Scientist
Award Amount: $749,944.00
RI Contact: Konstantin K. Likharev
Abstract:
We propose to develop a novel hybrid circuit approach combining CMOS and two terminal crosspoint nanodevices with a novel interface consisting of an array of pins with nanometer scale tips. Our CMOL approach will allow the fabrication of ultra-dense integrated circuits (up to 10^12 active devices… More

FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NASA
Principal Investigator: Jianyu Deng, Principal Investigator
Award Amount: $99,980.00
Abstract:
SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip. The active detector elements will be submicron gated channels with 2 dimensional electron gas (2DEG). The devices with gated 2DEG… More

Normally-OFF AlInGaN MOSHFET for power converters

Award Year / Program / Phase: 2009 / STTR / Phase I
Agency / Branch: DOD / NAVY
Research Institution: University of South Carolina
Principal Investigator: Jianyu Deng, Research Scientist
Award Amount: $69,882.00
RI Contact: Grigory Simin
Abstract:
We propose to develop and commercialize novel normally-off III-Nitride insulated gate heterostructure field effect transistor (MOSHFET) for power converters. Based on our experience in high power insulated gate III-N HFET development, we strongly believe that this device is the most promising for… More

High Power AlInGaN-Based Deep Ultraviolet Light Emitting Diodes

Award Year / Program / Phase: 2009 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Jinwei Yang, Chief Scientist
Award Amount: $729,480.00
Abstract:
Sensor Electronic Technology, Inc. will develop, prototype and start pilot production of new class of high power deep ultraviolet (DUV) light-emitting diodes (LED) using our proprietary and patented technology and novel technical approaches demonstrated during Phase I effort. Target performance… More

AlInN/GaN heterostructures for X-band RF power amplification

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Jinwei Yang, Research Scientist
Award Amount: $99,408.00
Abstract:
SETI proposes to develop and commercialize innovative technology for AlInN/GaN heterostructure growth and metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) fabrication for the high power X-band operation. Our technical approach is based on the proprietary and patented… More

AlInGaN MOSHFET Power Converters

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Remis Gaska, President and CEO
Award Amount: $99,673.00
Abstract:
We propose to develop and commercialize III-Nitride insulated gate MOSHFET-based power converters for radar T/R modules power supplies. Based on our experience in high power III-N MOSHFET development and figures of merit discussed below, we strongly believe that this device is the most promising for… More

Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Award Year / Program / Phase: 2009 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Jianyu Deng, Research Scientist
Award Amount: $299,836.00
Abstract:
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Due to extremely high electron density in the 2D channel formed at the AlGaN/GaN interface,… More

AlInN/GaN HFET over Free-Standing bulk GaN substrates

Award Year / Program / Phase: 2010 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: Rensselaer Polytechnic Institute
Principal Investigator: Jinwei Yang, Chief Scientist
Award Amount: $99,963.00
RI Contact: Michael Shur
Abstract:
SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density,… More

AlInN/GaN heterostructures for X-band RF power amplification

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Jinwei Yang, Chief Scientist
Award Amount: $749,823.00
Abstract:
SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. In Phase I, we successfully demonstrated MEMOCVDr growth of AlInN/GaN structures with Ga-free… More

SBIR Phase I: Development of UV-B SLED and LD

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency: NSF
Principal Investigator: Max Shatalov, ScD
Award Amount: $149,951.00
Abstract:
This Small Business Innovation Research Phase I project will develop innovative edge emitting superluminescent light emitting diodes (SLED) and laser diodes (LD) with emission in the UV-B spectral range (280 nm to 320 nm). A variety of optical sensing applications that require high power density… More

High-Temperature Low-Loss III-Nitride MOSHFET RF Limiter

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Xuhong Hu, Research Scientist
Award Amount: $69,199.00
Abstract:
We propose to develop a compact solid-state RF power limiter using III-Nitride technology fully compatible with that of other III-Nitride RF components (power amplifiers, RF switches etc.) The proposed limiter is based on the SET Inc. proprietary insulated gate device (MOSHFET) design and… More

SBIR Phase II: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency: NSF
Principal Investigator: Max Shatalov
Award Amount: $534,765.00
Abstract:
This Small Business Innovation Research Phase II project will develop and commercialize next-generation high-power deep ultraviolet light emitting diodes (DUV LEDs) with high quality p-type doped AlInGaN layers via migration-enhanced metal-organic chemical vapor deposition (MEMOCVD). DUV LEDs… More

SBIR Phase II:UV LED Lamp Based Water Disinfection for POU Compact Purification Systems

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency: NSF
Principal Investigator: Max Shatalov
Award Amount: $475,227.00
Abstract:
This SBIR Phase I project will establish a commercial water disinfection system based on the use of light emitting diodes that would be appropriate for use in residential settings. The Phase II effort will redesign the system so that the removal efficiency may be enhanced and the packaging of the… More

Semiconductor Ultraviolet Irradiation Devices for Greenhouse Crops

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency: USDA
Principal Investigator: Ignas Gaska, Bio-Engineer
Award Amount: $89,958.00
Abstract:
We propose developing, manufacturing, fielding and validating environmentally friendly, energy efficient revolutionary ultraviolet irradiation devices (UID) to improve nutritional value of greenhouse crops. UIDs will be based on a new technology to produce deep ultraviolet semiconductor Light… More

AlInN/GaN HFET over Free-Standing bulk GaN substrates

Award Year / Program / Phase: 2012 / STTR / Phase II
Agency / Branch: DOD / MDA
Research Institution: Rensselaer Polytechnic Institute
Principal Investigator: Daniel Billingsley, Senior Growth Engineer – (803) 647-9757
Award Amount: $999,859.00
RI Contact: M. Shur
Abstract:
This proposed research for Phase II consideration involves the growth of AlInN/GaN heterostructure field effect transistors (HFET) on bulk GaN substrates. By combining a homoepitaxial substrate for the growth of the heterostructures with the lattice-matching ability of the AlInN alloy, it is… More

Normally-OFF AlInN/GaN MISHFET with composite channel

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOD
Principal Investigator: Mikhail Gaevski, Senior Scientist – (803) 647-9757
Award Amount: $79,938.00
Abstract:
We propose to develop new key building blocks for next generation power electronics based on III-Nitride semiconductor technology. High-voltage, low-loss, normally-off III-Nitride insulated gate heterostructure field-effect transistor (MISHFET) is based on innovative and patent-pending… More

Ultraviolet Communication for Medical Applications

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOD
Principal Investigator: Yuriy Bilenko, Products Manager – (803) 647-9757
Award Amount: $99,950.00
Abstract:
Deep ultraviolet LEDs will be developed and tested for customized application. Medical Communication system will be studied and prototyped with use of Solid State Components. Optical, thermal, electrical and data transfer characteristics will be investigated theoretically and experimentally

Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Mikhail Gaevski, Director of Electronics Division – (803) 647-9757
Award Amount: $149,959.00
Abstract:
ABSTRACT: We propose to develop novel high-temperature robust control ICs compatible with power SiC device using on insulated gate III-Nitride transistors MISHFETs - over SiC native nitride substrate. SET Inc patented GaN MISHFET technology offers radical device performance improvement over SiC… More

GaN High-Power Low-Loss C3-varactor RF switch MMIC

Award Year / Program / Phase: 2014 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Mikhail Gaevski, DIrector of Electronics D – (803) 647-9757
Award Amount: $79,974.00
Abstract:
WWe propose to develop novel low-loss high-power fully planar GaN C3 (Capacitively-Coupled-Contact) varactor RF switch MMIC with switching time well below 300 ns. The use of GaN material system offers radical device performance improvement over MEMS, pin-diode and other switch types due to an… More