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Large Periphery AllnGaN-Gan MOSHFET Device For High Power X-Band Microwave…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
47543
Program Year/Program:
2005 / SBIR
Agency Tracking Number:
00-0771
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2005
Title: Large Periphery AllnGaN-Gan MOSHFET Device For High Power X-Band Microwave Amplifiers
Agency / Branch: DOD / MDA
Contract: F33615-01-C-1911
Award Amount: $908,800.00
 

Abstract:

We propose to develop submicron gate large periphery AllnGaN-Gan based metal-oxide semiconductor heterojunction field-effect transistors (MOSHFET) as a building block for high-power (>20W), high frequency (x-band) amplifiers.

Principal Investigator:

Remis Gaska
President and CEO
5187838986
gaska@s-et.com

Business Contact:

Michael Shur
Vice-President
5187830608
Shure@b-i-ts.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
21 Cavalier Way Latham, NY 12110

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No