Large Periphery AllnGaN-Gan MOSHFET Device For High Power X-Band Microwave Amplifiers
Agency / Branch:
DOD / MDA
We propose to develop submicron gate large periphery AllnGaN-Gan based metal-oxide semiconductor heterojunction field-effect transistors (MOSHFET) as a building block for high-power (>20W), high frequency (x-band) amplifiers.
Small Business Information at Submission:
President and CEO
SENSOR ELECTRONIC TECHNOLOGY, INC.
21 Cavalier Way Latham, NY 12110
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