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Microwave GaN MESFET on Conducting SiC Substrates

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
53139
Program Year/Program:
2001 / SBIR
Agency Tracking Number:
01-0455
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2001
Title: Microwave GaN MESFET on Conducting SiC Substrates
Agency / Branch: DOD / MDA
Contract: DASG60-01-P-0071
Award Amount: $64,601.00
 

Abstract:

We will develop and demonstrate high power GaN HDMESFETs grown over conducting 6H-SiC substrates for effective thermal management. The SiC substrate will be separated from the device channel by insulating GaN buffer layer thick enough to have thecapacitance between the substrate and the device contact pads smaller then or comparable to the gate-to-channel capacitance (patent pending). This will allow us to control noise, minimize backgating, sidegating, and current slump. Also, this substratecontact can be used to adjust the device threshold voltage, similar to what is done in silicon MOSFETs.A successful Phase II program will yield transistors to be used in MMIC modules for fabrication of highly efficient X-band power amplifiers. These havedirect applications in several commercial and military systems such as radars and wireless communication systems operating in 2-10 GHz frequency range. Primarily due to the significantly lower cost of conducting SiC substrates , transition from insulating4H-SiC to conducting 6H-SiC substrate material would significantly reduce the cost of the microwave power devices.

Principal Investigator:

Remis Gaska
President and CEO
5187838936
gaska@s-et.com

Business Contact:

Michael Shur
Vice-President
5187830608
shur@s-et.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
21 Cavalier Way Latham, NY 12110

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No