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High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over…
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 2
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Fiscal Year: 2003Title: High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214BAgency / Branch: DOD / MDAContract: F3361503C5425Award Amount: $749,678.00
Abstract:
We propose to develop commercially viable material growth technology for manufacturing of AlInGaN-based Double Heterostructure Field Effect Transistor (DHFET) epitaxial wafers on single crystal bulk AlN substrates. The epitaxial wafers will be optimizedfor the development of high-power, high frequency (X-band) transistors as building blocks for a new generation of ultra-high microwave power amplifiers. The use of a bulk AlN substrate allows us to reduce the dislocation density in the epitaxial layers,and to have excellent thermal conductivity comparable to that of semi-insulating 4H-SiC. We expect that III-Nitride based transistors on bulk AlN substrates will exhibit major improvements in the lifetime and reliability without compromising thermalmanagement of high power devices. Our Phase I program proved the feasibility of the novel AlInGaN-based DHFET design over single crystal bulk AlN substrates. In Phase II, we plan to optimize AlInGaN/InGaN/AlN DHFET design in order to maximize microwavepower and scaleup material growth up to 2¿¿ diameter AlN substrates.Small Business Information at Submission:SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209EIN/Tax ID: 141812556DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Missile Defense Agency |
Award ID: 59016 |
Program Year/Program: 2003 / SBIR |
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Agency Tracking Number: 02-1136 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |