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Development of in-situ Temperature and Bowing Control Tools for AlInGaN-based…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
59183
Program Year/Program:
2002 / SBIR
Agency Tracking Number:
022-0613
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2002
Title: Development of in-situ Temperature and Bowing Control Tools for AlInGaN-based High Power Transistor Structures
Agency / Branch: DOD / MDA
Contract: DASG6003P0121
Award Amount: $69,740.00
 

Abstract:

We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. The technology will be based on the development of a reproducibleMOCVD epitaxial layer growth technology using novel high precision in-situ surface temperature and substrate bowing control tools being developed by EMCORE Corp. Recently, we demonstrated novel AlGaN/InGaN/GaN Double Heterostructure Field EffectTransistor design, which allowed us to suppress the current dispersion and dramatically increase the reliability of the devices. Despite impressive achievements, production of these devices is impossible without availability of commercial material supply,particularly, of large size epitaxial wafers with highly reproducible material properties. This project will allow us to precisely control the layer thickness of AlN/GaN/InN materials.

Principal Investigator:

Ohalid Fareed
Research Scientist
8036479757
fareed@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No