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High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
59016
Program Year/Program:
2002 / SBIR
Agency Tracking Number:
02-1136
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2002
Title: High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B
Agency / Branch: DOD / MDA
Contract: F33615-02-M-5424
Award Amount: $69,838.00
 

Abstract:

We propose to evaluate the feasibility of single crystal bulk AlN substrates for the development of high-power, high-frequency III-Nitride Double Heterostructure Field Effect Transistors (DHFETs) as building blocks for microwave (X-band and higher)amplifiers. Higher reliability and increased life-time of high power transistors. Potential applications include T/R modules for phased array radars, base stations for next generation wireless communications

Principal Investigator:

Xuhong Hu
Research Scientist
8036479757
hu@s-et.com

Business Contact:

Remis Gaska
President and CEO
5187838936
gaska@s-et.com
Small Business Information at Submission:

Sensor Electronic Technology, Inc.
21 Cavalier Way Latham, NY 12110

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No