High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B
Agency / Branch:
DOD / MDA
We propose to evaluate the feasibility of single crystal bulk AlN substrates for the development of high-power, high-frequency III-Nitride Double Heterostructure Field Effect Transistors (DHFETs) as building blocks for microwave (X-band and higher)amplifiers. Higher reliability and increased life-time of high power transistors. Potential applications include T/R modules for phased array radars, base stations for next generation wireless communications
Small Business Information at Submission:
Sensor Electronic Technology, Inc.
21 Cavalier Way Latham, NY 12110
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