AlInGaN-based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates
Agency / Branch:
DOD / DARPA
We propose to develop technology for manufacturing deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250 nm. Blue and near UV (wavelength > 370 nm) light emitters are based on GaN/InGaN material system. In Phase I, wewill demonstrate LD structures with dislocation density below 107 cm-2, electroluminescence peak at 250 nm and stimulated emission at 250 nm under optical pumping. The obtained results will be used in the developing of the plan for Phase II.
Small Business Information at Submission:
President and CEO
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209
Number of Employees: