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AlInGaN-based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
58449
Program Year/Program:
2002 / SBIR
Agency Tracking Number:
02SB2-0307
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209-
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2002
Title: AlInGaN-based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates
Agency / Branch: DOD / DARPA
Contract: DAAH0103CR022
Award Amount: $98,234.00
 

Abstract:

We propose to develop technology for manufacturing deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250 nm. Blue and near UV (wavelength > 370 nm) light emitters are based on GaN/InGaN material system. In Phase I, wewill demonstrate LD structures with dislocation density below 107 cm-2, electroluminescence peak at 250 nm and stimulated emission at 250 nm under optical pumping. The obtained results will be used in the developing of the plan for Phase II.

Principal Investigator:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No