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High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
64106
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
031-1419
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2003
Title: High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer
Agency / Branch: DOD / MDA
Contract: DASG6003P0256
Award Amount: $69,929.00
 

Abstract:

We propose to a new approach AlGaN/GaN Heterostructure Field Effect Transistors (HFET) technology for reliable, stable, high-power microwave amplifiers using novel recessed gate/active passivation design. Under certain process conditions of BCl3 RIEetching for optimized InGaN films, the In etch product InCl3 will be formed on the surface stopping any further etching. The RIE etching rate of InGaN is much lower than the etching rate of AlGaN or GaN layers. Hence, InGaN can serve as RIE etch stoplayers. The thin InGaN film can be wet chemically etched by diluted KOH. The etching rate and etching pattern can be well controlled. The BCB passivation or Si3N4 passivation will be used to prevent AlGaN oxidation. Our approach will be used to improvethe breakdown voltage and output power for microwave power amplifiers, which is a key for the Transmit/Receive (T/R) module.

Principal Investigator:

Xuhong Hu
Research Scientist
8036479757
hu@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No