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Solving Reliability and Stability Problems for AlGaN/GaN Heterostructure Field…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
64139
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
031-1173
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2003
Title: Solving Reliability and Stability Problems for AlGaN/GaN Heterostructure Field Effect Transistors using BCB Passivation Technology
Agency / Branch: DOD / MDA
Contract: DASG6003P0226
Award Amount: $69,929.00
 

Abstract:

We propose to develop a new technology to AlGaN/GaN Heterostructure Field Effect Transistors (HFET) using benzocyclobutene (BCB) surface passivation process to improve microwave power and power added efficiency for the development of reliable and stablehigh-power AlGaN/GaN HFET microwave amplifiers. We will use this proprietary technology of the GaN-based BCB passivation for the fabrication of a more reliable and stable AlGaN/GaN HFETs. Similar to photoresist process, the BCB pattern can be wellcontrolled in the device fabrication. Comparing with conventional passivation, the BCB passivation technology has advantages of simple manufacturing process, low dielectric constant, no plasma-induced surface damage and no surface oxidization problem. Ourapproach will help to increase the power levels, and solve reliability and stability problems for GaN-based transistors, which is a key for the Transmit/Receive (T/R) module.

Principal Investigator:

Xuhong Hu
Research Scientist
8036479757
hu@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No