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Ultraviolet AlGaN-based Avalanche Photo Diode Grown over Single Crystal Bulk…

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
68908
Program Year/Program:
2004 / SBIR
Agency Tracking Number:
034100
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2004
Title: Ultraviolet AlGaN-based Avalanche Photo Diode Grown over Single Crystal Bulk AlN Substrates
Agency: NASA
Contract: NNL04AB35P
Award Amount: $69,904.00
 

Abstract:

Premature breakdown is a key obstacle in developing AlGaN-based avalanche photo diodes (APD) for ultraviolet (UV) light detection. Novel materials growth techniques, such as Hydride Vapor Phase Epitaxy (HVPE) allows for reduction of dislocation density only to approximately 10^7 cm-2. In order to reduce the number of growth defects and dislocation density in AlGaN-based APDs we will use single crystal bulk AlN substrates. We recently demonstrated that the use of a bulk AlN substrate allows us to reduce the dislocation density in the epitaxial AlN layers by more than four orders of magnitude down to 10^4-10^5 cm-2. The reduction of dislocation density below 10^4 cm-2 would enable us to fabricate up to 100 ?m diameter devices in dislocation-free areas of the wafers. Hence, we expect that AlGaN-based APDs on bulk AlN substrates will exhibit major improvements in the breakdown voltages required for stable performance of the devices.

Principal Investigator:

Yuriy Bilenko
Principal Investigator
8036479757
bilenko@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No