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InGaN-Channel Heterostructure Field Effect Transistor With Double Recessed Gate…

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
73514
Program Year/Program:
2006 / SBIR
Agency Tracking Number:
A043-048-2682
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2006
Title: InGaN-Channel Heterostructure Field Effect Transistor With Double Recessed Gate for Improved RF Performance
Agency / Branch: DOD / ARMY
Contract: W911QX-06-C-0086
Award Amount: $729,791.00
 

Abstract:

Sensor Electronic Technology Inc. proposes to develop a new epitaxial layer design with ternary (InGaN) and quaternary (AlInGaN) stop etch layers for double recess device fabrication. We already demonstrated significant improvement in the RF performance of AlGaN/InGaN/AlGaN/GaN-based HFETs with the recessed gate design. We used our novel Migration Enhanced MOCVD (MEMOCVDTM) deposition technique to incorporate a very thin (2 nm) InGaN layer into the AlGaN barrier. The InGaN layer was used as a stop-etch layer for RIE etching and selective wet chemical etching was used to remove the InGaN stop-etch layer using two proprietary etch processes. We propose to combine this approach with our novel AlGaN/AlInGaN/InGaN/GaN based Triple HFET (THFET) design. A quaternary AlInGaN cap layer grown over the InGaN channel will be used as a second stop etch layer for the RIE. We will recess both source and drain contacts and will fabricate them on the In-containing AlInGaN cap layer for reduced contact resistance. The expected benefits of the proposed design are higher gain and breakdown voltage, better linearity of the RF devices and suppression of current dispersion. We will also use our MOSHFET gate dielectric process to achieve superior device reliability and stability for transition to commercialization.

Principal Investigator:

Thomas Katona
R & D Program Manager
8036479757
tkatona@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No