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High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect…

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
74270
Program Year/Program:
2005 / SBIR
Agency Tracking Number:
03SB1-0447
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2005
Title: High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer
Agency / Branch: DOD / DARPA
Contract: W31P4Q-06-C-0066
Award Amount: $0.00
 

Abstract:

Sensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the recessed gate is such that the gate metal is CLOSER to the channel near the drain edge of the channel. The result is a variation of the device threshold voltage along the channel that makes the electric field along the channel much more uniform and might roughly double the average electron velocity in the channel. The conventional approach for improving the performance of GaN HEMTs involves field plates that work by introducing a metal gate extension over a dielectric. The gate extension splits the high field region under the gate (typically at the drain side of the gate) between two high field regions rather than one, reducing the maximum field. This results in (a) increase in the breakdown voltage and (b) improved device reliability. Although the field plate approach reduces the maximum electric field under the gate, the additional capacitance and corresponding velocity profile limit high frequency operation for these devices. We propose a radically different approach for pushing the GaN HEMT performance above the 200 GHz range.

Principal Investigator:

Thomas Katona
R & D Program Manager
8036479757
tkatona@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No