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Gradually buffered, delta-doped AlGaN/GaN/AlGaN Heterostructure Field-Effect…
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2005Title: Gradually buffered, delta-doped AlGaN/GaN/AlGaN Heterostructure Field-Effect TransistorsAgency / Branch: DOD / MDAContract: HQ0006-05-C-7205Award Amount: $99,867.00
Abstract:
New structure GaN-based field effect transistors (FETs) are proposed to solve the problem. A composition graded buffer, aiming at eliminating dislocations arising from hetero-epitaxy interface and suppressing channel electrons spillover under negative gate bias, a Si-delta-doped GaN layer just below the two-dimensional electron gas (2DEG) channel, used for polarization fields screening as well as carrier supplier, are the major innovations of the new structure. We propose to use a composition-graded AlGaN transition layer in-between the AlN buffer and the GaN layer. This carefully designed transition layer will be insulating and can gradually accommodate the lattice mismatch between AlN and GaN, eliminating/alleviating the dislocation generation. The piled-up polarization fields, which could deplete the 2DEG channel, will be taken care of by inserting a Si-delta-doping layer in the vicinity to the channel. Simulations will be done to guide experiments and find out the interactions among the composition grading, polarization fields and Si-delta-doping (concentration and position).Small Business Information at Submission:SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209EIN/Tax ID: 141812556DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Missile Defense Agency |
Award ID: 74622 |
Program Year/Program: 2005 / SBIR |
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Agency Tracking Number: 044-1577 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |