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SBIR Phase I: Growth of Bulk AlGaN Substrates Using a Modified Hydride Vapor…

Award Information

Agency:
National Science Foundation 		Branch:
N/A 		Award ID:
79591 		Program Year/Program:
2006 / SBIR
Agency Tracking Number:
0539513 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29201
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2006
Title: SBIR Phase I: Growth of Bulk AlGaN Substrates Using a Modified Hydride Vapor Phase Epitaxy (HVPE) Reactor
Agency: NSF
Contract: 0539513
Award Amount: $99,962.00
 

Abstract:

This Small Business Innovation Research (SBIR) Phase I project will develop bulk AlGaN substrates for advanced III-Nitride based semiconductor devices. The substrates will be grown by a modified hydride vapor phase epitaxy (HVPE) technique to produce thick, low dislocation density, lattice matched substrates for next generation electronic andoptoelectronic devices. Low dislocation density bulk III-Nitride substrates represent an enabling technology for a variety of devices, currently limited by heteroepitaxial growth on sapphire and SiC. Sensor Electronic Technology will use a novel HVPE growth technique coupled with substrate strain engineering to produce free standing AlGaN boules that will be used as seeds for continued bulk AlGaN development. Phase I will focus on optimizing AlGaN growth processes for a range of aluminum compositions, while establishing the feasibility of commercializing bulk substrates using this approach. Commercially, III-Nitride device development and commercialization has expanded rapidly over the last decade with blue/green/white LEDs found in most cellular phones, traffic signals, and large screen displays; standards for the next generation high density DVD format being established based on blue laser diode technology; and AlGaN/GaN HFETs being targeted to replace power amplifiers and low noise amplifiers in military radar and wireless communication applications. III-Nitrides are arguably the fastest growing area of compound semiconductors at this time with new applications for these materials continually developing. Estimated revenue for III-Nitride devices exceeds $10 billion by 2007, presenting a tremendous opportunity for bulk substrate commercialization

Principal Investigator:

Thomas M. Katona
Mr
8036479757
tkatona@s-et.com

Business Contact:

Thomas M. Katona
Mr
8036479757
tkatona@s-et.com
Small Business Information at Submission:

SET
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No