Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs
Agency / Branch:
DOD / NAVY
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Unlike RF switches based on regular semiconductor devices, key characteristics of properly designed III-Nitride HFET - based RF switches will actually improve at cryogenic temperatures. These include insertion loss, maximum switching powers, switching times and others.
Small Business Information at Submission:
SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209
Number of Employees: