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Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
82871
Program Year/Program:
2007 / SBIR
Agency Tracking Number:
N072-147-0525
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209-
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2007
Title: Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs
Agency / Branch: DOD / NAVY
Contract: N00039-08-C-0068
Award Amount: $69,958.00
 

Abstract:

We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Unlike RF switches based on regular semiconductor devices, key characteristics of properly designed III-Nitride HFET - based RF switches will actually improve at cryogenic temperatures. These include insertion loss, maximum switching powers, switching times and others.

Principal Investigator:

Nezih Pala
Research Scientist
8036479757
pala@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No