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Home » Awards » Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Award Information

Agency: Department of Defense	Branch: Navy	Award ID: 82871	Program Year/Program: 2007 / SBIR
Agency Tracking Number: N072-147-0525	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 2007

Title: Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Agency / Branch: DOD / NAVY

Contract: N00039-08-C-0068

Award Amount: $69,958.00

Abstract:
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Unlike RF switches based on regular semiconductor devices, key characteristics of properly designed III-Nitride HFET - based RF switches will actually improve at cryogenic temperatures. These include insertion loss, maximum switching powers, switching times and others.

Principal Investigator:
Nezih Pala
Research Scientist
8036479757
pala@s-et.com

Business Contact:
Remis Gaska
President and CEO
8036479757
gaska@s-et.com

Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No