High-Power Integrated Radio Frequency (RF) Switches for Joint Tactical Radio Systems (JTRS)
Agency / Branch:
DOD / ARMY
The proposal calls for development of novel type of RF switches for JTRS using patented III-Nitride insulated gate heterostructure field-effect transistors (MOSHFETs). III-Nitride MOSHFETs are excellent candidates for high-power RF stages of JTRS. They possess the highest power densities, highest operating temperatures and best robustness amongst other solid-state devices. The proposers' team has demonstrated superior performance of monolithically integrated RF switches using MOSHFETs. In the course of proposed work, integrated SPDT and SP4T RF switches meeting the JTRS requirements for insertion loss less than 0.2 dB and switching powers exceeding +46 dBm will be developed.
Small Business Information at Submission:
President and CEO
SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209
Number of Employees: