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High-Power Integrated Radio Frequency (RF) Switches for Joint Tactical Radio…

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
87066
Program Year/Program:
2008 / SBIR
Agency Tracking Number:
A081-007-0073
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2008
Title: High-Power Integrated Radio Frequency (RF) Switches for Joint Tactical Radio Systems (JTRS)
Agency / Branch: DOD / ARMY
Contract: W15P7T-08-C-P035
Award Amount: $69,986.00
 

Abstract:

The proposal calls for development of novel type of RF switches for JTRS using patented III-Nitride insulated gate heterostructure field-effect transistors (MOSHFETs). III-Nitride MOSHFETs are excellent candidates for high-power RF stages of JTRS. They possess the highest power densities, highest operating temperatures and best robustness amongst other solid-state devices. The proposers' team has demonstrated superior performance of monolithically integrated RF switches using MOSHFETs. In the course of proposed work, integrated SPDT and SP4T RF switches meeting the JTRS requirements for insertion loss less than 0.2 dB and switching powers exceeding +46 dBm will be developed.

Principal Investigator:

Remis Gaaska
President and CEO
8036479757
gaska@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No