FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices

Award Information

Agency: National Aeronautics and Space Administration	Branch: N/A	Award ID: 90821	Program Year/Program: 2009 / SBIR
Agency Tracking Number: 084660	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 2009

Title: FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices

Agency: NASA

Contract: NNX09CF26P

Award Amount: $99,980.00

Abstract:
SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip. The active detector elements will be submicron gated channels with 2 dimensional electron gas (2DEG). The devices with gated 2DEG (commonly known as field-effect transistors) respond to the incoming FIR radiation due to the rectification of radiation induced oscillations of electron density (electron plasma). Phase I of the project will be devoted to the development, design, and characterization of the single pixel, consisting of an array of field-effect transistors, targeting at responsivity increase of 100 times, and demonstrating the technical feasibility of 10^10 cm Hz^0.5/W detectivity.

Principal Investigator:
Jianyu Deng
Principal Investigator
8036479757
deng@s-et.com

Business Contact:
Jianyu Deng
Business Official
8036479757
deng@s-et.com

Small Business Information at Submission:

Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No