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FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
90821
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
084660
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices
Agency: NASA
Contract: NNX09CF26P
Award Amount: $99,980.00
 

Abstract:

SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip. The active detector elements will be submicron gated channels with 2 dimensional electron gas (2DEG). The devices with gated 2DEG (commonly known as field-effect transistors) respond to the incoming FIR radiation due to the rectification of radiation induced oscillations of electron density (electron plasma). Phase I of the project will be devoted to the development, design, and characterization of the single pixel, consisting of an array of field-effect transistors, targeting at responsivity increase of 100 times, and demonstrating the technical feasibility of 10^10 cm Hz^0.5/W detectivity.

Principal Investigator:

Jianyu Deng
Principal Investigator
8036479757
deng@s-et.com

Business Contact:

Jianyu Deng
Business Official
8036479757
deng@s-et.com
Small Business Information at Submission:

Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No