Normally-OFF AlInGaN MOSHFET for power converters
Agency / Branch:
DOD / NAVY
We propose to develop and commercialize novel normally-off III-Nitride insulated gate heterostructure field effect transistor (MOSHFET) for power converters. Based on our experience in high power insulated gate III-N HFET development, we strongly believe that this device is the most promising for achieving the best combination of low ON-resistance, high operating voltage and high switching frequencies. It is also the best wide bandgap device type that allows for stable and reliable operation at required high voltage and current levels.
Small Business Information at Submission:
Research Institution Information:
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209
Number of Employees:
University of South Carolina
Swearingen Engineering Center
301 South Main Street, Rm 3A80
Columbia, SC 29208
Nonprofit college or university