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Normally-OFF AlInGaN MOSHFET for power converters
Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-09-M-0340
Agency Tracking Number: N09A-023-0436
Amount:
$69,882.00
Phase:
Phase I
Program:
STTR
Solicitation Topic Code:
N09-T023
Solicitation Number:
2009.A
Timeline
Solicitation Year:
2009
Award Year:
2009
Award Start Date (Proposal Award Date):
2009-06-29
Award End Date (Contract End Date):
2010-04-30
Small Business Information
1195 Atlas Road
Columbia, SC
29209
United States
DUNS:
135907686
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Jianyu Deng
Title: Research Scientist
Phone: (803) 647-9757
Email: deng@s-et.com
Title: Research Scientist
Phone: (803) 647-9757
Email: deng@s-et.com
Business Contact
Name: Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
Name: University of South Carolina
Contact: Grigory Simin
Address:
Phone: (803) 777-0986
Type: Nonprofit College or University
Contact: Grigory Simin
Address:
Swearingen Engineering Center
301 South Main Street, Rm 3A80
Columbia, SC
29208
United States
Phone: (803) 777-0986
Type: Nonprofit College or University
Abstract
We propose to develop and commercialize novel normally-off III-Nitride insulated gate heterostructure field effect transistor (MOSHFET) for power converters. Based on our experience in high power insulated gate III-N HFET development, we strongly believe that this device is the most promising for achieving the best combination of low ON-resistance, high operating voltage and high switching frequencies. It is also the best wide bandgap device type that allows for stable and reliable operation at required high voltage and current levels.
* Information listed above is at the time of submission. *