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AlInN/GaN heterostructures for X-band RF power amplification

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
91554
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
B083-024-0520
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: AlInN/GaN heterostructures for X-band RF power amplification
Agency / Branch: DOD / MDA
Contract: W9113M-09-C-0108
Award Amount: $99,408.00
 

Abstract:

SETI proposes to develop and commercialize innovative technology for AlInN/GaN heterostructure growth and metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) fabrication for the high power X-band operation. Our technical approach is based on the proprietary and patented MEMOCVD® growth technology which allows for high quality III-Nitride epitaxial material deposition at reduced temperatures required for In incorporation. Novel epitaxial structure design will be combined with our patented MOSHFET technology and patent-pending five-terminal transistor design to reduce the gate leakage, eliminate current collapse and suppress the -ospread- of the gate region toward the drain under high drain bias in order to demonstrate stable high-power performance at X-band frequency.

Principal Investigator:

Jinwei Yang
Research Scientist
8036479757
jinwei@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No