AlInN/GaN heterostructures for X-band RF power amplification
Agency / Branch:
DOD / MDA
SETI proposes to develop and commercialize innovative technology for AlInN/GaN heterostructure growth and metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) fabrication for the high power X-band operation. Our technical approach is based on the proprietary and patented MEMOCVD® growth technology which allows for high quality III-Nitride epitaxial material deposition at reduced temperatures required for In incorporation. Novel epitaxial structure design will be combined with our patented MOSHFET technology and patent-pending five-terminal transistor design to reduce the gate leakage, eliminate current collapse and suppress the -ospread- of the gate region toward the drain under high drain bias in order to demonstrate stable high-power performance at X-band frequency.
Small Business Information at Submission:
SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209
Number of Employees: