AlInN/GaN heterostructures for X-band RF power amplification

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 91554	Program Year/Program: 2009 / SBIR
Agency Tracking Number: B083-024-0520	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 2009

Title: AlInN/GaN heterostructures for X-band RF power amplification

Agency / Branch: DOD / MDA

Contract: W9113M-09-C-0108

Award Amount: $99,408.00

Abstract:
SETI proposes to develop and commercialize innovative technology for AlInN/GaN heterostructure growth and metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) fabrication for the high power X-band operation. Our technical approach is based on the proprietary and patented MEMOCVD® growth technology which allows for high quality III-Nitride epitaxial material deposition at reduced temperatures required for In incorporation. Novel epitaxial structure design will be combined with our patented MOSHFET technology and patent-pending five-terminal transistor design to reduce the gate leakage, eliminate current collapse and suppress the -ospread- of the gate region toward the drain under high drain bias in order to demonstrate stable high-power performance at X-band frequency.

Principal Investigator:
Jinwei Yang
Research Scientist
8036479757
jinwei@s-et.com

Business Contact:
Remis Gaska
President and CEO
8036479757
gaska@s-et.com

Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No