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Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
82871
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
N072-147-0525
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2009
Title: Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs
Agency / Branch: DOD / NAVY
Contract: N66001-09-C-0084
Award Amount: $299,836.00
 

Abstract:

We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Due to extremely high electron density in the 2D channel formed at the AlGaN/GaN interface, III-Nitride HFET - based RF switches offer low insertion loss, lower than that of pin diodes and quite comparable to that achievable with MEMS switches. As compared to MEMS and other switch types, III-N HFET switches have much higher switching powers, shorter switching times, excellent temperature stability. Importantly, the HFET performance is expected to actually improve at cryogenic temperatures.

Principal Investigator:

Jianyu Deng
Research Scientist
8036479757
deng@s-et.com

Business Contact:

REmis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No