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Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 2
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Fiscal Year: 2009Title: Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETsAgency / Branch: DOD / NAVYContract: N66001-09-C-0084Award Amount: $299,836.00
Abstract:
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Due to extremely high electron density in the 2D channel formed at the AlGaN/GaN interface, III-Nitride HFET - based RF switches offer low insertion loss, lower than that of pin diodes and quite comparable to that achievable with MEMS switches. As compared to MEMS and other switch types, III-N HFET switches have much higher switching powers, shorter switching times, excellent temperature stability. Importantly, the HFET performance is expected to actually improve at cryogenic temperatures.Small Business Information at Submission:SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road Columbia, SC 29209EIN/Tax ID: 141812556DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Navy |
Award ID: 82871 |
Program Year/Program: 2009 / SBIR |
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Agency Tracking Number: N072-147-0525 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |