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A Reliable Aluminum Nitride High Temperature Electronic Package for High Power…

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
78569
Program Year/Program:
2006 / SBIR
Agency Tracking Number:
A052-140-3695
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Sienna Technologies, Inc.
19501 144TH AVE NE SUITE F-500 Woodinville, WA 98072-4423
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2006
Title: A Reliable Aluminum Nitride High Temperature Electronic Package for High Power Devices
Agency / Branch: DOD / ARMY
Contract: W31P4Q-06-C-0500
Award Amount: $729,266.00
 

Abstract:

In the Phase I program Sienna Technologies, Inc. has successfully developed (i) a low temperature die attach process that is capable of operating over 400ºC, (ii) wire bondable gold and silver thick film metallizations on AlN substrates, (iii) high temperature stable wire bonds, and (iv) an all AlN single chip module. Based on the success in the Phase I program Sienna Technologies, Inc. proposes to develop AlN based multichip modules that will facilitate the operation of high power GaN and SiC devices at temperatures greater than 300ºC. We will design and assemble a multichip power module, i.e., a 1000 W power inverter capable of operating at 300ºC in an AlN monolithic package, which can operate at temperatures greater than 300ºC using the assembly processes and materials that were developed in Phase I.

Principal Investigator:

Ender Savrun
President
4254857272
ender.savrun@siennatech.com

Business Contact:

Canan Savrun
Vice President
4254857272
canan.savrun@siennatech.com
Small Business Information at Submission:

SIENNA TECHNOLOGIES, INC.
19501 144th Avenue NE Woodinville, WA 98072

EIN/Tax ID: 911724179
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No